| ASIC | ... | Application-Specific Integrated Circuit |
| BB | ... | Band-to-Band tunneling |
| BGN | ... | Bandgap Narrowing |
| BICMOS | ... | Bipolar CMOS |
| BJT | ... | Bipolar Junction Transistor |
| BTE | ... | Boltzmann Transport Equation |
| CAD | ... | Computer Aided Design |
| CML | ... | Current-Mode Logic |
| CMOS | ... | Complementary MOS |
| CPU | ... | Central Processing Unit |
| CQFL | ... | Continuous Quasi-Fermi Level |
| CVD | ... | Chemical Vapor Deposition |
| DD | ... | Drift-Diffusion |
| DHBT | ... | Double Heterojunction Bipolar Transistor |
| DOS | ... | Density of States |
| ECAD | ... | Electronic CAD |
| ECL | ... | Emitter-Coupled Logic |
| ET | ... | Energy Transport |
| GSH | ... | Global Self Heating |
| HBT | ... | Heterojunction Bipolar Transistor |
| HD | ... | Hydrodynamic |
| HEMT | ... | High-Electron-Mobility Transistor |
| HFET | ... | Heterostructure Field Effect Transistor |
| IC | ... | Integrated Circuit |
| II | ... | Impact Ionization |
| MC | ... | Monte-Carlo |
| MESFET | ... | Metal Semiconductor Field Effect Transistor |
| MMIC | ... | Monolithic Microwave Integrated Circuit |
| MOCVD | ... | Metal Organic Chemical Vapor Deposition |
| MOS | ... | Metal Oxide Semiconductor |
| MOSFET | ... | MOS Field Effect Transistor |
| PAE | ... | Power-Added Efficiency |
| PHEMT | ... | Pseudomorphic High-Electron-Mobility Transistor |
| RF | ... | Radio Frequency |
| SH | ... | Self Heating |
| SHBT | ... | Single Heterojunction Bipolar Transistor |
| SIMS | ... | Secondary Ion Mass Spectroscopy |
| SRH | ... | Shockley-Read-Hall |
| TBB | ... | Trap-assisted Band-to-Band tunneling |
| TCAD | ... | Technology CAD |
| TE | ... | Thermionic Emission |
| TFE | ... | Thermionic Field Emission |
| USD | ... | United States Dollars |
| VISTA | ... | Viennese Integrated System for TCAD Applications |