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4.5 Simulation of Polysilicon Emitter Bipolar Transistors

Polysilicon emitter silicon based Bipolar Junction Transistors (BJTs) are attractive semiconductor devices with their high performance-to-cost ratio and power application in modern mobile telecommunication systems.

In this section results of two-dimensional simulations of polysilicon emitter BJTs are presented. For that purpose proper polysilicon contact models have been implemented in MINIMOS-NT.


Vassil Palankovski