List of Publications

P1

V. Palankovski, M. Rottinger, T. Simlinger, and S. Selberherr,
``Two-Dimensional Simulation and Comparison of Si-based and GaAs-based HBTs,''
in Viewgraphs III-V Semiconductor Device Simulation Workshop, (Turin, Italy), Oct. 1997.

P2

V. Palankovski, M. Knaipp, and S. Selberherr,
``Influence of the Material Composition and Doping Profiles on HBTs Device Performance,''
in Proc. IASTED Intl. Conf. on Modelling and Simulation, (Pittsburgh, Pennsylvania, USA), pp. 7-10, May 1998.

P3

V. Palankovski, T. Grasser, and S. Selberherr,
``SiGe HBT in Mixed-Mode Device and Circuit Simulation,''
in Proc. Workshop on Compound Semiconductor Devices and Integrated Circuits, (Zeuthen, Germany), pp. 145-146, May 1998.

P4

V. Palankovski, G. Kaiblinger-Grujin, and S. Selberherr,
``Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices,''
in Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, (Cardiff, Wales, UK), PSA p. 15, June 1998.

P5

V. Palankovski, G. Kaiblinger-Grujin, and S. Selberherr,
``Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance,''
in Proc. European Workshop on Low Temperature Electronics, (San Miniato, Italy), June 1998;
in L. Brogiato, D.V. Camin, and G. Pessina, editors, J.Phys.IV, vol. 8, pp. 91-94, EDP Sciences, 1998.

P6

V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr,
``A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation,''
in K. De Meyer and S. Biesemans, editors, Simulation of Semiconductor Processes and Devices, pp. 105-108, Springer, 1998. (Leuven, Belgium), Sept. 1998.

P7

T. Grasser, V. Palankovski, G. Schrom, and S. Selberherr,
``Hydrodynamic Mixed-Mode Simulation,''
in K. De Meyer and S. Biesemans, editors, Simulation of Semiconductor Processes and Devices, pp. 247-250, Springer, 1998. (Leuven, Belgium), Sept. 1998.

P8

R. Quay, R. Reuter, V. Palankovski, and S. Selberherr,
``S-Parameter Simulation of RF-HEMTs,''
in Proc. High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, pp. 13-18, (Manchester, UK), Nov. 1998.

P9

V. Palankovski, B. Gonzales, H. Kosina, A. Hernandez, and S. Selberherr,
``A New Analytical Energy Relaxation Time Model for Device Simulation,''
in Proc. Intl. Conf. on Modeling and Simulation of Microsystems, Semiconductors, Sensors, and Actuators, (San Juan, Puerto Rico, USA), pp. 395-398, April 1999.

P10

B. Gonzales, V. Palankovski, H. Kosina, A. Hernandez, and S. Selberherr,
``An Energy Relaxation Time Model for Device Simulation,''
in Proc. IASTED Intl. Conf. on Modelling and Simulation, (Philadelphia, Pennsylvania, USA), pp. 367-370, May 1999.

P11

R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr,
``A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials,''
in Abstracts E-MRS Spring Meeting, (Strasbourg, France), p. L-7, June 1999.

P12

B. Gonzales, V. Palankovski, H. Kosina, A. Hernandez, and S. Selberherr,
``An Analytical Model for the Electron Energy Relaxation Time,''
in Proc. Electron Devices Conference CDE, (Madrid, Spain), pp. 263-266, June 1999.

P13

V. Palankovski and S. Selberherr,
``Thermal Models for Semiconductor Device Simulation,''
in IEEE Proc. European Conference on High Temperature Electronics, (Berlin, Germany), pp. 25-28, July 1999.

P14

R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, and S. Selberherr,
``III/V Device Optimization by Physics-Based S-Parameter Simulation,''
in Proc. Intl. Symp. on Compound Semiconductors, (Berlin, Germany), pp. 325-328, Aug. 1999.

P15

V. Palankovski, R. Strasser, H. Kosina, and S. Selberherr,
``A Systematic Approach for Model Extraction for Device Simulation Application,''
in Proc. IASTED Intl. Conf. on Applied Modelling and Simulation, (Cairns, Australia), pp. 463-466, Sept. 1999.

P16

V. Palankovski, S. Selberherr, and R. Schultheis,
``Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide,''
in Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Kyoto, Japan), pp. 227-230, Sept. 1999.

P17

V. Palankovski, R. Quay, S. Selberherr, and R. Schultheis,
``S-Parameter Simulation of HBTs on Gallium-Arsenide,''
in Proc. High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, (London, UK), pp. 15-19, Nov. 1999.

P18

B. Gonzales, V. Palankovski, H. Kosina, A. Hernandez, and S. Selberherr,
``An Energy Relaxation Time Model for Device Simulation,''
Solid-State Electronics, vol. 43, pp. 1791-1795, Nov. 1999.

P19

V. Palankovski, G. Kaiblinger-Grujin, and S. Selberherr,
``Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices,''
Materials Science & Engineering, vol. B66, pp. 46-49, Dec. 1999.

P20

V. Palankovski, R. Schultheis, A. Bonacina, and S. Selberherr,
``Effectiveness of Silicon Nitride Passivation in III-V Based HBTs,''
in Abstracts Intl. Conf. on Defects in Insulating Materials, (Johannesburg, South Africa), p. 188, April 2000.

P21

V. Palankovski and S. Selberherr,
``State-of-the-Art Micro Materials Models in MINIMOS-NT,''
in Abstracts Intl. Conf. on Micro Materials MicroMat, (Berlin, Germany), pp. 290-291, April 2000, and in Proc. Intl. Conf. Micro Materials MicroMat, in print.

P22

V. Palankovski and S. Selberherr,
``III-V Semiconductor Materials in MINIMOS-NT,''
in Abstracts MRS Spring 2000 Meeting, (San Francisco, California, USA), p. 249, April 2000.

P23

V. Palankovski, R. Schultheis, A. Bonacina, and S. Selberherr,
``Investigations on the Impact of the InGaP Ledge on HBT-Performance,''
in Proc. Workshop on Compound Semiconductor Devices and Integrated Circuits, (Egean See, Greece), pp. (VII-) 5-6, May 2000.

P24

R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr,
``A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials,''
Materials Science in Semiconductor Processing, vol. 3(1-2), pp. 149-155, May 2000.

P25

R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, and S. Selberherr,
``Simulation of Gallium-Arsenide Based High Electron Mobility Transistors,''
in Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Seattle, Washington, USA), pp. 74-77, Sept. 2000.

P26

V. Palankovski, S. Selberherr, R. Quay, and R. Schultheis,
``Analysis of HBT Degradation After Electrothermal Stress,''
in Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Seattle, Washington, USA), pp. 245-248, Sept. 2000.

P27

T. Grasser, R. Quay, V. Palankovski, and S. Selberherr,
``A Global Self-Heating Model for Device Simulation,''
in W.A. Lane, G.M. Crean, F.A. McCabe, and H. Grünbacher, editors, Proc. 30th European Solid-State Device Research Conference, (Cork, Ireland), pp. 324-327, Frontier Group, Sept. 2000.

P28

V. Palankovski, T. Grasser, M. Knaipp, and S. Selberherr,
``Simulation of Polysilicon Emitter Bipolar Transistors,''
in W.A. Lane, G.M. Crean, F.A. McCabe, and H. Grünbacher, editors, Proc. 30th European Solid-State Device Research Conference, (Cork, Ireland), pp. 608-611, Frontier Group, Sept. 2000.

P29

V. Palankovski, R. Quay, and S. Selberherr,
``Industrial Application of Heterostructure Device Simulation,''
in Tech.Dig. GaAs IC Symposium, (Seattle, Washington, USA), pp. 117-120, (invited), Nov. 2000.

P30

R. Quay, V. Palankovski, M. Chertouk, A. Leuther, and S. Selberherr,
``Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters,''
in Intl. Electron Devices Meeting, (Washington D.C., USA), Dec. 2000, in print.

P31

V. Palankovski, R. Schultheis, A. Bonacina, and S. Selberherr,
``Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors,''
in Radiation Effects and Defects in Solids, accepted Sept. 2000, in print.

P32

R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, and S. Selberherr,
``Nonlinear Electronic Transport and Device Performance of HEMTs,''
IEEE Trans.Electron Devices, accepted Sept. 2000, in print.

P33

V. Palankovski, S. Selberherr, and R. Schultheis,
``Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide,'' IEEE Trans.Electron Devices, submitted Nov. 1999, revised Oct. 2000.

P34

V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, and S. Selberherr,
``A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization,'' IEEE Trans.Electron Devices, submitted Nov. 2000.