| IC | Integrated Circuit |
| FEOL | Front End Of the Line |
| BEOL | Back End Of the Line |
| 2D | Two-Dimensional |
| 3D | Three-Dimensional |
| MCM | Multi-Chip Module |
| SOC | System-On-Chip |
| SiP | System-in Package |
| CSP | Chip-Scale Package |
| TSV | Through Silicon Via |
| CMOS | Complementary Metal-Oxide-Semiconductor |
| DRIE | Deep Reactive Ion Etching |
| CVD | Chemical Vapor Deposition |
| PVD | Physical Vapor Deposition |
| ECD | Electro Chemical Deposition |
| CTE | Coefficient of Thermal Expansion |
| DRAM | Dynamic Random-Access Memory |
| NAND | Negative AND |
| DDR4 | Double Data Rate-4 |
| MEMS | Microelectromechanical Systems |
| FEM | Finite Element Method |
| FEA | Finite Element Analysis |
| PDE | Partial Differential Equation |
| 4PB | Four Point Bend |
| DRIE | Deep Reactive Ion Etching |
| V-W | Volmer-Weber |