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5.1 Optimization with a Complete Process Simulation

In this application the electrical parameters of a (VDMOS) (Vertical Double-diffused Metal Oxide Semiconductor) are improved by the use of the high-level analysis functionality integrated in the simulation framework.

5.1.1 Structure of a VDMOS Transistor
5.1.2 Goal of the Optimization Task
5.1.3 Simulation Flow of the Device Structure
5.1.4 Solving the Optimization Problem
5.1.5 Results

R. Plasun