Electrostatics is improved in these devices as well. The fact that there are no dangling bond states at the surface of CNTs allows for a much wider choice of gate insulators other than conventional . This improved gate control without any additional gate leakage becomes very important in scaled devices with effective thickness below . Also, the strong one-dimensional electron confinement and full depletion in the nanometer-scale diameter of the SW-CNTs (typically ) should lead to a suppression of short-channel effects in transistors .
The combined impact of transport and electrostatic benefits together with the
fact that semiconducting CNTs are, unlike silicon, direct-gap materials,
suggest applications in opto-electronics as well [6,7]. As
far as integration is concerned, semiconducting CNTs benefit from their band
structure which exhibits essentially the same effective mass for electrons and
holes. This should enable similar mobilities and performance of n-type and
p-type transistors which is necessary for a complementary metal-oxide
semiconductor (CMOS)-like technology. Finally, since CNTs can be both metallic
and semiconducting, an all-CNT electronics can be envisioned. In this case,
metallic CNTs could act as high current carrying local
interconnects , while semiconducting CNTs would form the
active devices. The most important appeal of this approach is an ability to
fabricate one of the critical device dimensions (the CNT diameter) reproducibly
using synthetic chemistry.