Prev: 7. High-Pressure Chemical Vapor

7.1 Simulation Model

As indicated in Fig. 7.1 the high-pressure chemical vapor deposition (HPCVD) model consists of a combination of specialized tools which are executed iteratively by a control instance. After extracting the surface of the initial geometry, a three-dimensional mesh of the gas domain above the considered structure is generated.

Figure 7.1: Flowchart for the CVD model.

The differential equations describing the mass transfer and the reaction kinetics are set up and solved with a general finite element solver which operates on the previously generated unstructured tetrahedral mesh. The resulting deposition rates are transfered to the topography simulator working with a cellular material representation, which performs the surface propagation leading to the new cellular topography. This procedure is repeated automatically for every time-step until the overall simulation time is completed. The parameters for the meshing tool and the description of the continuum transport model are set up in control files and remain unchanged during all time-steps. In this way the process runs fully automatic without any further user interaction.

Prev: 7. High-Pressure Chemical Vapor