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Next: 5.4.3 Technology C: Pseudomorphic HEMT Up: 5.4 Technologies Under Investigation Previous: 5.4.1 Technology A: Pseudomorphic HEMT

5.4.2 Technology B: Pseudomorphic high-power HEMT on GaAs

For high-power applications up to 42 GHz additional process steps are introduced into Technology A to form a double recess device structure. Typical gate lengths $ {\it l}_{\mathrm{g}}$ amount to about 200 nm. The technology is available on 6 inch wafers, while most of the examples were processed on 4 inch wafers.