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Next: 5.4.8 Technology H: AlGaN/GaN HEMTs Up: 5.4 Technologies Under Investigation Previous: 5.4.6 Technology F: Metamorphic Depletion

5.4.7 Technology G: Enhancement Mode metamorphic HEMT on GaAs

For high-speed digital applications for 40 Gbit/s and above enhancement type HEMTs are developed. Available gate lengths are $ {\it l}_{\mathrm{g}}$= 100 nm-200 nm. The lithography is performed by electron beam and the recess definition is based on a wet etched process.