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Next: 5.4.7 Technology G: Enhancement Mode Up: 5.4 Technologies Under Investigation Previous: 5.4.5 Technology E: InP Based

5.4.6 Technology F: Metamorphic Depletion Type InAlAs/InGaAs HEMT on GaAs

Various metamorphic depletion type HEMTs are shown based on both optical and electron beam lithography. Typical gate lengths are 500 nm-100 nm on 4 inch wafers for different applications from high gain amplifiers in the Ka-band to highest frequency low noise operation in the D-band.