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Next: 6.1 Thermal Investigations Up: . Previous: 5.4.8 Technology H: AlGaN/GaN HEMTs

6. Transistor Characterization

The first part of this chapter provides thermal investigations of III-V HEMTs and comparisons of three-dimensional thermal simulations and measurements. In the second part DC and large-signal measurements are given to demonstrate the interaction of device simulation and measurements obtained during process development.