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7.2 The Bias Dependence of the Small-Signal Equivalent Circuit
Elements

A systematic investigation of the elements as a function of physical parameters can be performed based on the agreement obtained in Fig. 7.7 and Fig. 7.8 as a function of bias and temperature ${\it T}_\mathrm{L}$ .

Subsections

7.2.1 The Transconductance ${\mit g}_{\mathrm{m}}$
7.2.2 The Gate Source Capacitance ${\it C}_{\mathrm{gs}}$
7.2.3 The Gate Drain Capacitance ${\it C}_{\mathrm{gd}}$
7.2.4 Further Small-Signal Elements
7.2.5 The Current Gain Cut-off Frequency ${\it f}_\mathrm{T}$
7.2.6 ${\it f}_\mathrm{max}$ and Related Quantities

Quay
2001-12-21

7.2 The Bias Dependence of the Small-Signal Equivalent Circuit Elements

7.2 The Bias Dependence of the Small-Signal Equivalent Circuit
Elements