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This chapter treats simulation studies on issues of state-of-the-art industrial HEMT technology
development. Fig. 7.1 shows a three-dimensional image of a typical multi-finger HEMT with
critical areas highlighted.
The thermal boundary conditions (1) were already addressed in Chapter 6. The
heterojunction carrier transport (2) is key to understand and simulate HEMTs. The
(-)doping (3) determines the available carrier sheet charge density
in the channel.
High field effects (4) such as e.g. impact ionization are to be accounted for in the device, which
eventually allows to simulate gate currents
Three-dimensional image of critical
simulation issues in HEMTs(1)=Thermal boundary conditions, (2)=
Heterojunction carrier transport, (3)= (-)doping
activation, (4) = high field effects, (5) = gate currents.