List of own Publications

Q1

R. Quay, R. Reuter, V. Palankovski, and S. Selberherr, ``S-Parameter Simulation of RF-HEMTs,'' Proc. High Performance Electron Devices for Microwave and Optoelectronic Applications (Manchester), pp. 13-18, 1998.

Q2

R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, ``A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials,'' in Abstracts E-MRS Spring Meeting, (Strasbourg), p. L-7, 1999.

Q3

R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, and S. Selberherr, ``III-V Device Optimization by Physics-Based S-Parameter Simulation,'' Proc. 26$^{th}$ Intl. Symp. Compound Semiconductors, (Berlin), pp. 325-328, 1999.

Q4

V. Palankovski, R. Quay, S. Selberherr, and R. Schultheis, `` S-Parameter Simulation of HBTs on Gallium-Arsenide,'' Proc. High Performance Electron Devices for Microwave and Optoelectronic Applications, (London), pp. 15-19, 1999.

Q5

R. Quay, R. Reuter, T. Grasser, and S. Selberherr, ``Thermal Simulations of III/V HEMTs, ''Proc. High Performance Electron Devices for Microwave and Optoelectronic Applications, (London), pp. 87-91, 1999.

Q6

R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, ``A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials, Mater. Sci. Semicond. Process., vol. 3, no. 1-2, pp. 149-155, 2000.

Q7

R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, and S. Selberherr, ``Simulation of Gallium-Arsenide Based High Electron Mobility Transistors,'' Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Seattle), pp. 74-77, 2000.

Q8

V. Palankovski, R. Quay, S. Selberherr, and R. Schultheis, ``Analysis of HBT Behaviour after Strong Electrothermal Stress,''Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Seattle), pp. 245-248, 2000.

Q9

T. Grasser, V. Palankovski, R. Quay, and S. Selberherr, ``A Global Self-Heating Model for Device Simulation,'' Proc. 30$^{th}$ European Solid-State Device Research Conference, (Cork), pp. 324-327, 2000. (W.A. Lane, G.M. Crean, F.A. McCabe, H. Grünbacher, eds.), Frontier Group.

Q10

V. Palankovski, R. Quay, and S. Selberherr, ``Industrial Application of Heterostructure Device Simulation,'' Proc. GaAs-IC Symp., (Seattle), pp. 117-120, (invited), 2000.

Q11

R. Quay, V. Palankovski, M. Chertouk, A. Leuther, and S. Selberherr, ``Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters,''Intl. Electron Devices Meeting Tech. Dig, (San Francisco), pp. 186-189, 2000.

Q12

R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, and S. Selberherr, ``Nonlinear Electronic Transport and Device Performance of HEMTs, IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 210-217, 2001.

Q13

R. Quay, R. Schultheis, W. Kellner, V. Palankovski, and S. Selberherr, ``A Review of Modeling Issues for RF Heterostructure Device Simulation,'' Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, (Athens), pp. 432-435,2001.

Q14

V. Palankovski, R. Quay, and S. Selberherr, ``Industrial Application of Heterostructure Device Simulation,'' IEEE J. Solid-State Circuits, (invited), vol. 36, no. 9, pp. 1365-1370, 2001.