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3.1.1 Basic Semiconductor Equations
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3. The Physical Model
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3. The Physical Model
3.1 The Device Simulator
MINIMOS-NT
In Fig.
3.1
the standard terms for layers in a vertical pseudomorphic HEMTs structure are shown.
Figure 3.1:
Standard terms for layers in a HEMT used in this work.
These terms will be used consistently in the course of this work, though the material types and compositions vary.
Subsections
3.1.1 Basic Semiconductor Equations
3.1.2 Drift-Diffusion Current Relations
3.1.3 Hydrodynamic Model Current Equations
3.1.4 Lattice Heat Flow Equation
Quay
2001-12-21
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