The condition for the semiconductor-insulator interface
equivalently is determined by a continuous potential and by an
applied surface charge density
according to the
*Gauß* law:

The carrier flux and the carrier energy flux are zero. The lattice temperature is continuous. To describe the Fermi level pinning at the surface due to a high density of states for traps, distributed surfaces charges are introduced which describe the surface depletion due to the band bending. The current densities and the energy fluxes are set to zero.

2001-12-21