The ohmic resistances and represent a rather macroscopic and concentrated form of the carrier transport near the gate contact. Due to the strongly locally varying carrier concentrations with a depleted barrier layer n cm and a channel with n cm, and carrier temperatures near the gate of 10 a direct physical interpretation is not suitable as the transport situation is extremely non-linear and thus non-ohmic. However, the information contained in the extraction is to be understood in a behavioral sense. As both a current and the voltages and are available, the effective impedances and can be calculated. Especially does supply a high amount information, e.g. for compact noise modeling .