2.1.3.1 Rapid Thermal Annealing

Ion implantation causes damage, so called point defects, to the crystal lattice of the semiconductor. Hence the crystal structure is repaired by means of rapid thermal annealing (RTA). However, the simulation of RTA is difficult, because the underlying diffusion mechanisms are quite complex [2,30,32,45,64,71]. At the same time a correct modeling of these effects is desirable since they are the cause for reverse short channel effects [50,68,76] of MOS devices.