2.1.3.2 Oxidation

Modeling thermal oxidation represents a significant challenge since, in addition to the physical phenomena that are incorporated during the chemical process, the formation of the silicon-dioxide also changes the topography of the wafer surface [13,63,67,69,80,98]. As a consequence, simulation tools need to be able to cope with a transient geometry of the simulated area. Sophisticated algorithms such as implemented in AMIGOS [67] are necessary in order to meet the requirements arising from this complexity.