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1. Introduction
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Michael Stockinger's Dissertation
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List of Figures
List of Tables
1.1 Important characteristics of ``The 1999 National Technology Roadmap for Semiconductors'' published by the SIA.
3.1 The two device generations used for optimization.
3.2 Gaussian model parameters.
4.1 Repeat level handling in the
MINIMOS-NT
input deck.
4.2 Parameter setup for optimizations with Gaussian functions.
4.3 Optimized parameters after drive current optimizations with Gaussian functions.
4.4 Performance comparison of the various drive current optimization results.
5.1 Transfer characteristics of the PCD device.
5.2 Model parameters for the three-transistor model.
5.3 Results of the qualitative study on the PCD device.
5.4 Bulk current simulation results.
5.5 Optimized parameters of the various practical alternatives of the PCD device
5.6 Performance comparison of the various practical alternatives of the PCD device
6.1 Resulting parameters from the gate delay time optimizations using one Gaussian function.
6.2 Resulting parameters from the gate delay time optimizations using two Gaussian functions.
6.3 Comparison of the inverter characteristics and performance gains.
6.4 Comparison of the gate delay times of the ring oscillator to the single stage inverter model
C.1 Constants and parameters of the analytical MOS model used in this work.
Michael Stockinger
2000-01-05
