3.8 Empirical Pseudopotential Theory for Arbitrary Strain

The empirical pseudopotential method in its nonlocal relativistic version was developed by Chelinkowsky and Cohen [Chelikowsky76,Cohen89]. It is frequently used to calculate the band structure of semiconductors. The method is efficient, and requires only a limited set of fitting parameters [Jungemann03,Fischetti96a,Rieger93,Bufler98]. These few parameters are usually calibrated in order to fit energy gaps, that can be determined from experiments, and are available for a large set of materials [Yu03].

Subsections

• 3.8.1 The Empirical Pseudopotential Method
• 3.8.2 Inclusion of Strain

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology