A branch coincides with a

**capacitance**

Is the quotient of transferred charge
from one
conductor to another, and the change in potential difference
between the two conductors caused by this charge
transfer.
.
(Note the difference between
**capacitance**, **self-capacitance**, and
**total capacitance**.)

**charge-node**

Is a **node** with known charge.

**circuit object**

Capacitors, tunnel junctions, and voltage sources;
these are the building blocks of single-electron devices and circuits. It is
equivalent to a **branch**.

**CMOS**

**C**omplementary **M**etal **O**xide
**S**emiconductor

**co-tunneling**

Simultaneous tunneling of two or more electrons. It is usually a
disturbing effect in single-electron devices.

**Coulomb blockade**

Current respectively tunneling suppression at low bias, caused
by charging effects.

**Coulomb gap**

A shift in the current-voltage characteristic
of a tunnel junction, caused by charging effects.

**Coulomb oscillations**

Temporal or spatial correlated current oscillations caused by
charging effects.

**Coulomb energy**

Charging energy for an **island** or a ** quantum dot** (usually with one additional electron).

**DRAM**

**D**ynamic **R**andom **A**ccess **M**emory

**FET**

**F**ield **E**ffect **T**ransistor

**floating-node**

Is a **node** with unknown potential and
charge.

**global rule**

As opposed to the **local rule**, tunnel rates
are calculated, taking into account the change in free energy of the
whole circuit.

**GUI**

**G**raphical **U**ser **I**nterface

**island**

A region, for example a piece of metal or semiconductor, that is
electrically insulated to its surrounding. Charge can be transferred
only through tunnel junctions.

**local rule**

As opposed to the **global rule**, tunnel rates
are calculated, taking into account only the change in free energy
of the junction through which the electron tunneled.

**macro-node**

Is a set of **nodes** that are linked by voltage
sources.

**macroscopic quantum tunneling of charge (q-MQT)**

Is a synonym for
**co-tunneling**.

**MC**

**M**onte **C**arlo; a statistical sampling method
for the solution of mathematical problems.

**ME**

**M**aster **E**quation; a conservation law
for the temporal change of the probability distribution function
of a physical quantity.

**MOS**

**M**etal **O**xide **S**emiconductor

**MTJ**

**M**ulti-**T**unnel-**J**unction

**node**

The connection of two or more **circuit objects**. A
**node** very often coincides with an **island** or
a **quantum dot**. **Nodes** are the starting and
ending points of **branches**. It is either a
**charge-**, **potential-** or
**floating-node**. See also **macro-node**.

**potential-node**

Is a **node** with known electrical potential.

**PRN**

**P**seudo **R**andom **N**umbers

**quantum dot <>or briefly dot**

A synonym to
**island** with a
connotation that the electron energy level spacing is bigger
than *k*_{B} *T* and not quasi-continuous. In other
words the energy spectrum is discrete. This is in particular the
case for very small **islands** with a size close to or
less than the Fermi wavelength .
In Semiconductors
50 nm and in metals
1 nm.

**self-capacitance**

Is the **capacitance** of a conductor against
infinity which is equivalent with ground. All other ** capacitances** with other conductors are not included in this value.

**SET**

**S**ingle-**E**lectron **T**unneling

**SIMON**

**SIM**ulation **O**f **N**anostructures.
A multipurpose single-electron device and circuit simulator.

**strength parameter**

Is a value that characterizes the opaqueness of a
potential barrier. It is defined as
,
where
*d* is the width and *E*_{0} the height of the barrier.

**total capacitance**

Is the sum of all **capacitances** from one
conductor to all other conductors plus the
**self-capacitance**. It is measured with all other conductors
grounded.