**abbreviations**- Definition of Terms and
**accelerating the simulator**- 4.2.4 Accelerating the Simulator
**access time**- Read/Write Errors and Access
**applications of single-electronics**- 5 Applications
**approximate of the matrix exponential operator**- 3.3.1 Krylov Subspace Approximate
**Arnoldi algorithm**- H Arnoldi Algorithm
**asymmetry in tunnel junctions**- 2.7 The Double Tunnel
**background charge**- 2.7 The Double Tunnel
| 2.7 The Double Tunnel
| 2.8 Single Electron Transistor
| 2.8 Single Electron Transistor
| 5.2.3 Random Background Charge
**independence**- 5.2.10 Multi Island Memory
**independent memory**- 5.2.9 Qo Independent Memory

**barrier**- 2.4.2 Tunnel Rate
**bibliography**- Bibliography
**birth-death process**- 3.2 Tunneling: a Stochastic
**bit error**- Bit Errors
**Bloch oscillations**- 1 Introduction: What is
**Boltzmann approximation**- B Fermi Energy Dependence
**branch**- 3.1.1 Notation
**capacitance****calculation**- A Capacitance Calculations
**effective**- 3.1.5 Method of Critical
**of arbitrary arrangement of spheres**- A.4 Capacitance of an
**of sphere**- A.1 Self Capacitance of
**of sphere with dielectric shell**- A.2 Self Capacitance of
**of spheres in a line**- A.4 Capacitance of an
**of two spheres**- A.3 Capacitance of Two
**stray**- 2.6 Influence of the | 2.7 The Double Tunnel

**capacitance matrix**- 2.1.1 Electron Electron Interaction
| 3.1.2 Electrostatic Energy
**elements of**- 2.1.1 Electron Electron Interaction
**inverse of**- 2.1.1 Electron Electron Interaction

**carrier concentration**- Material Properties | 2.1.1 Electron Electron Interaction
**characteristic energies**- 2.1 Characteristic Energies
**charge****background**- 2.7 The Double Tunnel | 2.7 The Double Tunnel | 2.8 Single Electron Transistor | 2.8 Single Electron Transistor | 5.2.3 Random Background Charge
**polarization**- 2.2 Work Done by | 2.7 The Double Tunnel
**relaxation**- 2.2 Work Done by

**charge, electric**- 1 Introduction: What is
**charge-node**- 3.1.1 Notation
**circuit editor**- 4.2.1 Graphical User Interface
**circuit, single-electron**- 3.1.1 Notation
**circuits****manufacturability**- 5.2.5 Manufacturability

**co-tunneling**- 2.9 Co Tunneling
| 5.2.2 Error Rate/Probability
**elastic**- 2.9 Co Tunneling
**inelastic**- 2.9 Co Tunneling | 2.9 Co Tunneling
**second order at zero temperature**- F Second Order Co

**code structure of SIMON**- 4.2 Code structure
**combination of Monte Carlo method with direct calculation**- 3.6 Combination of Monte
**comparison between master equation and Monte Carlo method**- 3.5 Comparison between Master
**complexity of memories**- 5.2.11 Discussion of Simulation
**conduction band edge**- 2.4.2 Tunnel Rate
**conservation of particles**- E Fermi's Golden Rule
**Cooper pair**- 1 Introduction: What is
**Coulomb blockade**- 1 Introduction: What is | 2.5 Minimum Tunnel Resistance | 2.7 The Double Tunnel
**Coulomb energy**- 5.2.1 Operation Temperature
**Coulomb gap**- 2.7 The Double Tunnel
**Coulomb oscillations**- 1 Introduction: What is | 2.8 Single Electron Transistor | 5.2.1 Operation Temperature
**critical charge**- 3.1.5 Method of Critical
**critical voltage, method of**- 3.1.5 Method of Critical
**current oscillations**- 2.6 Influence of the
**current source**- Current Sources
**curriculum vitae**- Curriculum Vitae
**decay process**- 5.2.2 Error Rate/Probability
**degeneracy carrier concentration**- Material Properties
**density of states**- 2.4.2 Tunnel Rate | 2.9 Co Tunneling
**discussion of simulation results**- 5.2.11 Discussion of Simulation
**divergence of tunnel rate**- 2.9 Co Tunneling
**double tunnel junction**- 2.7 The Double Tunnel
*IV*-characteristic- 2.7 The Double Tunnel
**free energy of**- 2.7 The Double Tunnel

**dripping tap**- 1 Introduction: What is
**duration to next tunnel event**- 4.2.2 Flow Chart
**dynamic memory**- 5.2.7 Multi Tunnel Junction
**effective capacitance**- 3.1.5 Method of Critical
**effective mass**- Material Properties | 2.1.2 Quantum Confinement Energies
**elastic co-tunneling**- 2.9 Co Tunneling
**electric charge**- 1 Introduction: What is
**electromagnetic environment****influence of**- 2.6 Influence of the

**electron box**- 1 Introduction: What is
**electron cloud**- 1 Introduction: What is
**electron-electron interaction**- 2.1.1 Electron Electron Interaction
**electrostatic charging energy**- 2.1.1 Electron Electron Interaction
**electrostatic energy**- 3.1.2 Electrostatic Energy
**of double tunnel junction**- 2.7 The Double Tunnel

**energy**- 2.1 Characteristic Energies
**electrostatic**- 2.1.1 Electron Electron Interaction | 3.1.2 Electrostatic Energy
**Fermi**- 2.1.1 Electron Electron Interaction
**free**- 3.1.4 Free Energy
**Helmholtz's free**- 2.3 Helmholtz's Free Energy
**level**- 2.4.2 Tunnel Rate
**levels**- 2.1.2 Quantum Confinement Energies
**quantum confinement**- 2.1.2 Quantum Confinement Energies
**spectrum**- 2.4 Tunneling

**energy gap**- Material Properties
**error****bit**- Bit Errors
**read/write**- Read/Write Errors and Access

**error probability**- 5.2.2 Error Rate/Probability
**error rate**- 5.2.1 Operation Temperature | 5.2.2 Error Rate/Probability
**event tree**- 3.6 Combination of Monte
**exponential of a matrix**- 3.3.1 Krylov Subspace Approximate
**fabrication techniques**- 5.1 Fabrication Techniques
**Fermi energy**- Material Properties
| 2.1.1 Electron Electron Interaction
**change in**- 2.1.1 Electron Electron Interaction
**dependence on free charge carrier concentration**- B Fermi Energy Dependence

**Fermi function**- 2.4.2 Tunnel Rate
**integration of**- D Integration of Fermi

**Fermi's golden rule**- 2.4.2 Tunnel Rate | 2.9 Co Tunneling | E Fermi's Golden Rule
**Fermi-Dirac distribution**- 2.4.2 Tunnel Rate
**finite lifetime**- 2.9 Co Tunneling
**finite potential well**- C.2 The Finite Potential
**flip-flop**- 5.2.6 Single Electron Flip
**floating-node**- 3.1.1 Notation
**flow chart**- 4.2.2 Flow Chart
**free energy**- 2.3 Helmholtz's Free Energy
| 3.1.4 Free Energy
**change in**- 2.4.2 Tunnel Rate
**of arbitrary circuit**- 3.1 Free Energy of
**of double tunnel junction**- 2.7 The Double Tunnel
**single-electron transistor**- 2.8 Single Electron Transistor

**frequency of Coulomb oscillations**- 1 Introduction: What is
**frequent state space**- 3.6 Combination of Monte
**global rule**- 2.6 Influence of the
**gold clusters**- 5.1.5 Gold Clusters
**golden rule**- 2.4.2 Tunnel Rate | 2.9 Co Tunneling | E Fermi's Golden Rule
**graphical circuit editor**- 4.2.1 Graphical User Interface
**graphical user interface**- 4.2 Code structure
**Helmholtz's free energy**- 2.3 Helmholtz's Free Energy
**high impedance environment**- 2.6 Influence of the
**image charge method**- A.3 Capacitance of Two
**implementation issues**- 4 Implementation Issues
**impurity**- 2.7 The Double Tunnel
**independence tobackground charge**- 5.2.10 Multi Island Memory
**inelastic co-tunneling**- 2.9 Co Tunneling | 2.9 Co Tunneling
**infinite potential well**- 2.1.2 Quantum Confinement Energies | C.1 The Infinite Potential
**influence of electromagnetic environment**- 2.6 Influence of the
**instable regions of operation**- 3.1.5 Method of Critical
**integration of Fermi functions**- D Integration of Fermi
**intermediate virtual state**- 2.9 Co Tunneling
**intrinsic carrier concentration**- Material Properties
**inversive congruential method**- 4.2.3 Random Number Generator
*IV*-characteristic**of double tunnel junction**- 2.7 The Double Tunnel
**of tunnel junction**- 2.4.2 Tunnel Rate

**Jordan canonical form**- 3.3.1 Krylov Subspace Approximate
**Krylov subspace approximate**- 3.3.1 Krylov Subspace Approximate
**lattice constant**- Material Properties
**lattice structure**- 4.2.3 Random Number Generator
**linear congruential method**- 4.2.3 Random Number Generator
**shuffled**- 4.2.3 Random Number Generator

**local rule**- 2.6 Influence of the
**low impedance environment**- 2.6 Influence of the
**macro-node**- 3.1.1 Notation
**macroscopic quantum tunneling of charge**- 2.9 Co Tunneling
**manufacturability of single-electron circuits**- 5.2.5 Manufacturability
**many body problem**- 3.2 Tunneling: a Stochastic
**Markov process**- 3.2 Tunneling: a Stochastic
**master equation**- 3.2 Tunneling: a Stochastic
**comparison with Monte Carlo method**- 3.5 Comparison between Master
**simulation method**- 3.3 Master Equation Method

**material properties, table of**- Material Properties
**matrix****exponential**- 3.3.1 Krylov Subspace Approximate

**memory***Q*_{0}-independent- 5.2.9 Qo Independent Memory
**background charge independent**- 5.2.9 Qo Independent Memory
**complexity**- 5.2.11 Discussion of Simulation
**dynamic**- 5.2.7 Multi Tunnel Junction
**multi-island**- 5.2.10 Multi Island Memory
**multi-tunnel-junction**- 5.2.7 Multi Tunnel Junction
**ring**- 5.2.8 Ring Memory
**static**- 5.2.6 Single Electron Flip

**metal**- 2.1.1 Electron Electron Interaction
**metal tunnel junction**- D Integration of Fermi
**method of critical voltage**- 3.1.5 Method of Critical
**minimum tunnel resistance**- 2.5 Minimum Tunnel Resistance
**Monte Carlo****simulation method**- 3.4 Monte Carlo Method
**combination with direct calculation**- 3.6 Combination of Monte
**comparison with master equation method**- 3.5 Comparison between Master

**Monte Carlo method****resolution limit**- Step Size

**multi-island memory**- 5.2.10 Multi Island Memory
**multi-tunnel-junction memory**- 5.2.7 Multi Tunnel Junction
**node**- 3.1.1 Notation
**charge-**- 3.1.1 Notation
**floating-**- 3.1.1 Notation
**macro-**- 3.1.1 Notation
**potential-**- 3.1.1 Notation

**nonlinear congruential method**- 4.2.3 Random Number Generator
**notation**- 3.1.1 Notation
**occupation probability**- 2.4.2 Tunnel Rate
**occupation probability of state**- 3.2 Tunneling: a Stochastic
**opaqueness**- 2.4.1 Transmission Probability
**open system**- 2.2 Work Done by
**operation temperature**- 5.2.1 Operation Temperature
**orthodox theory**- 2.4 Tunneling | 2.4.2 Tunnel Rate
**orthonormal basis in Krylov subspace**- 3.3.1 Krylov Subspace Approximate
**outlook**- 6 Outlook
**Padé approximation**- 3.3 Master Equation Method | G Rational Padé Approximations
**particle**- 1 Introduction: What is
**planar quantum dots**- 5.1.3 Planar Quantum Dots
**point process**- 3.2 Tunneling: a Stochastic
**Poisson distribution**- 3.2 Tunneling: a Stochastic
**Poisson process**- 3.2 Tunneling: a Stochastic
**polarization charge**- 2.2 Work Done by | 2.7 The Double Tunnel
**poly-silicon structures**- 5.1.4 Poly Silicon Structures
**potential barrier**- 2.4.2 Tunnel Rate
**rectangular**- C.3 The Rectangular Potential

**potential well****finite**- C.2 The Finite Potential
**infinite**- 2.1.2 Quantum Confinement Energies | C.1 The Infinite Potential

**potential-node**- 3.1.1 Notation
**power consumption**- 5.2.4 Power Consumption
**pseudo random numbers**- 4.2.3 Random Number Generator | 4.2.3 Random Number Generator
*Q*_{0}-independent memory- 5.2.9 Qo Independent Memory
**quantum confinement energy**- 2.1.2 Quantum Confinement Energies
**quantum dot**- C.1 The Infinite Potential
**quantum fluctuations**- 1 Introduction: What is
**random background charge**- 5.2.3 Random Background Charge
**random number generator**- 4.2.3 Random Number Generator
**inversive congruential method**- 4.2.3 Random Number Generator
**linear congruential**- 4.2.3 Random Number Generator
**nonlinear congruential method**- 4.2.3 Random Number Generator
**shift-register method**- 4.2.3 Random Number Generator
**shuffled linear congruential method**- 4.2.3 Random Number Generator
**step size**- Step Size

**rare state space**- 3.6 Combination of Monte
**read error**- Read/Write Errors and Access
**rectangular potential barrier**- C.3 The Rectangular Potential
**relative permittivity**- Material Properties
**resolution limit of Monte Carlo method**- Step Size
**ring memory**- 5.2.8 Ring Memory
**Schrödinger equation**- C Solutions to Schrödinger's
**self-capacitance**- 2.1.1 Electron Electron Interaction
**semiconductor**- 2.1.1 Electron Electron Interaction
**shadow mask evaporation**- 5.1.1 Shadow Mask Evaporation
**shift-register method**- 4.2.3 Random Number Generator
**short circuit**- 3.1.2 Electrostatic Energy
**shuffled linear congruential method**- 4.2.3 Random Number Generator
**SIMON**- 4 Implementation Issues
**acceleration**- 4.2.4 Accelerating the Simulator
**block diagram**- 4.2 Code structure
**flow chart**- 4.2.2 Flow Chart
**screen shot**- 4.2.1 Graphical User Interface | 4.2.1 Graphical User Interface

**simulation of single-electron devices**- 3 Simulation of Single
**single electronics**- 1 Introduction: What is
**single-electron memories**- 5.2 Single Electron Memories
**single-electron transistor**- 2.8 Single Electron Transistor
**single-electronics****applications of**- 5 Applications

**space correlated tunneling**- 2.8 Single Electron Transistor
**space-correlated tunneling**- 2.7 The Double Tunnel
**stable regions of operation**- 3.1.5 Method of Critical
**staircase characteristic**- 2.7 The Double Tunnel
**state transition diagram**- 3.2 Tunneling: a Stochastic
**static memory**- 5.2.6 Single Electron Flip
**step edge cut-off fabrication method**- 5.1.2 Step Edge Cut
**step size**- Step Size
**stray capacitance**- 2.7 The Double Tunnel
**strength parameter**- 2.4.1 Transmission Probability
**summary of the equations describing single-electron tunnel devices**- 4.1 Summary of the
**superconductors**- 1 Introduction: What is
**symbols, list of**- List of Symbols
**terms, definition of**- Definition of Terms and
**Thévenin equivalent circuit**- 3.1.5 Method of Critical
**theory of single electron tunneling**- 2 Theory of Single
**thermal energy**- 1 Introduction: What is
**thermal fluctuations**- 1 Introduction: What is
**total capacitance**- 2.1.1 Electron Electron Interaction
**transient simulation**- 4.2.2 Flow Chart
**transistor, singel-electron**- 2.8 Single Electron Transistor
**transmission probability**- 2.4.1 Transmission Probability
**transmission rate**- E Fermi's Golden Rule
**tunnel****resistance**- 2.4.2 Tunnel Rate
**time**- 2.4 Tunneling

**tunnel junction**- 1 Introduction: What is
*IV*-characteristic- 2.4.2 Tunnel Rate
**current biased**- 1 Introduction: What is
**double**- 2.7 The Double Tunnel
**metal**- 2.4.2 Tunnel Rate | D Integration of Fermi

**tunnel rate**- E Fermi's Golden Rule
*N*th-order co-- 2.9 Co Tunneling
**divergence of**- 2.9 Co Tunneling
**second order co-**- 2.9 Co Tunneling

**tunnel resistance**- 1 Introduction: What is
**condition for**- 2.5 Minimum Tunnel Resistance
**minimum**- 2.5 Minimum Tunnel Resistance

**tunneling**- 2.4 Tunneling
**a stochastic process**- 3.2 Tunneling: a Stochastic
**macroscopic**- 2.9 Co Tunneling
**space correlated**- 2.8 Single Electron Transistor
**space-correlated**- 2.7 The Double Tunnel
**theory of single electron**- 2 Theory of Single

**uniformly distributed PRN**- 4.2.3 Random Number Generator
**user interface**- 4.2 Code structure
**voltage-controlled voltage source**- Voltage-Controlled Voltage Sources
**work done by voltage source**- 3.1.3 Work of Voltage
**work done by voltage sources**- 2.2 Work Done by
**work function**- Material Properties
**write error**- Read/Write Errors and Access