Differences

This shows you the differences between two versions of the page.

--- hideaki_tsuchiya [2014/12/01 13:49] – created weinbub
+++ hideaki_tsuchiya [2020/03/07 10:57] (current) – [Additional information] weinbub
@@ Line 1: / Line 1: @@
 ====== Hideaki Tsuchiya ======
+{{:black.png?&20|}} //We are deeply saddened that Hideaki Tsuchiya passed away on September 21, 2017.
+//
 ===== Biography =====
+Hideaki Tsuchiya received Ph. D. degree in electronic engineering from Kobe University, Kobe, Japan, in 1993.
+He is currently an Associate Professor with the Department of Electrical and Electronic Engineering, Kobe University.
+From 1999 to 2000, he was a Visiting Scientist at the Unversity of Illinois at Urbana-Champaign, Urbana. His current research includes the quantum transport modeling of nanoscale MOSFETs, and the atomistic simulation of 2D materials and devices.
 ===== Wigner-specific research =====
+We have applied a Wigner Monte Carlo technique to the electron transport analysis of III-V channel MOSFETs. The III-V channels are InGaAs and InP. We have found that the subthreshold property of III-V MOSFETs may be degraded due to the source-drain direct tunneling, even in devices with longer channels than those used in Si-MOSFETs, because III-V channels have electron effective masses significantly smaller than Si.
 ===== Affiliation(s) =====
+  * Associate Professor, Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Japan
-===== Email =====
-[[tsuchiya@eedept.kobe-u.ac.jp]]
 ===== Additional information =====
+  * [[http://www.researchgate.net/profile/Hideaki_Tsuchiya|ResearchGate Profile]]