Hideaki Tsuchiya received Ph. D. degree in electronic engineering from Kobe University, Kobe, Japan, in 1993. He is currently an Associate Professor with the Department of Electrical and Electronic Engineering, Kobe University. From 1999 to 2000, he was a Visiting Scientist at the Unversity of Illinois at Urbana-Champaign, Urbana. His current research includes the quantum transport modeling of nanoscale MOSFETs, and the atomistic simulation of 2D materials and devices.
We have applied a Wigner Monte Carlo technique to the electron transport analysis of III-V channel MOSFETs. The III-V channels are InGaAs and InP. We have found that the subthreshold property of III-V MOSFETs may be degraded due to the source-drain direct tunneling, even in devices with longer channels than those used in Si-MOSFETs, because III-V channels have electron effective masses significantly smaller than Si.