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Philippe Dollfus

Biography

Philippe Dollfus received the Ph. D. degree in sciences from the University of Paris-Sud, Orsay, France, in 1989. He joined the Centre National de la Recherche Scientifique (CNRS) in 1989 as a researcher at the Institut d’Electronique Fondamentale (IEF), Orsay, France. He currently heads a group of computational nanoelectronics. He has been involved in the development of the Monte Carlo technique for transport and device simulation. His original research interests were focused on transport physics in III-V and IV-IV transistors, transient radiation effects in SOI MOSFETs and spintronics in semiconductor structures. His research activity currently includes the physics and modelling of quantum transport in advanced nanodevices, including multi-gate nano-MOSFET, quantum dots, resonant tunnelling diodes, quantum wires, carbon nanotubes and graphene. He is member of the editorial board of Journal of Computational Electronics.

Wigner-specific research

  • Damien Querlioz, Jerome Saint-Martin, and Philippe Dollfus: “Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation”, Journal of Computational Electronics, Vol.9, No.3-4, p.224–231, 2010.
  • Damien Querlioz, Huu-Nha Nguyen, Jerome Saint-Martin, Arnaud Bournel, Sylvie Galdin-Retailleau, and Philippe Dollfus: “Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport”, Journal of Computational Electronics, Vol.8, No.3-4, p.324–335, 2009.
  • Huu-Nha Nguyen, Damien Querlioz, Sylvie Galdin-Retailleau, Arnaud Bournel, and Philippe Dollfus: “Wigner Monte Carlo simulation of CNTFET: Comparison between semi-classical and quantum transport”, Proc. IWCE, p.257–260, 2009.
  • Damien Querlioz, Jerome Saint-Martin, Arnaud Bournel, and Philippe Dollfus: “Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices”, Physical Review B, Vol.78, No.16, p.165306, 2008.
  • Damien Querlioz, Jerome Saint-Martin , Van-Nam Do, Arnaud Bournel, and Philippe Dollfus: “A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach”, Nanotechnology, IEEE Transactions on, Vol.5, No.6, p.737–744, 2006.
  • Damien Querlioz, Philippe Dollfus, Van-Nam Do, Bournel, Arnaud, et al.: “An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs”, Journal of Computational Electronics, Vol.5, No.4, p.443–446, 2006.

Affiliation(s)

  • Research Director, CNRS, Université Paris-Sud, France

Additional information

philippe_dollfus.1572459713.txt.gz · Last modified: 2019/10/30 18:21 by weinbub

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