Erasmus Langer
Siegfried Selberherr
Giulliano Aloise
Oskar Baumgartner
Markus Bina
Hajdin Ceric
Johann Cervenka
Lado Filipovic
Wolfgang Gös
Klaus-Tibor Grasser
Philipp Hehenberger
Hans Kosina
Alexander Makarov
Goran Milovanovic
Mihail Nedjalkov
Neophytos Neophytou
Roberto Orio
Dmitry Osintsev
Vassil Palankovski
Mahdi Pourfath
Karl Rupp
Franz Schanovsky
Zlatan Stanojevic
Ivan Starkov
Viktor Sverdlov
Stanislav Tyaginov
Stanislav Vitanov
Paul-Jürgen Wagner
Josef Weinbub

Goran Milovanovic
Dipl.-Ing. Dr.techn.
milovanovic(at!)iue.tuwien.ac.at
Biography:
Goran Milovanovic was born in Tulln, Austria, in 1981. He studied physics at the Technische Universität Wien, where he received the degree of Diplomingenieur in November 2005. He joined the Institute for Microelectronics in April 2007 and in March 2011 he has received his PhD degree. His research interests include device modeling and the simulation of strained Si CMOS transistors.

Numerical Simulation of Quantum Cascade Lasers

The Quantum Cascade Laser (QCL), first demonstrated in 1994, is at the verge of commercial application. Due to the incoherent nature of the stationary charge transport in QCL heterostructures, the time evolution of the carrier distribution function is governed by a semiclassical Pauli Master Equation (PME). To investigate charge transport in QCLs, a simulator has been developed which solves the PME by means of a Monte Carlo method. It includes relevant scattering mechanisms like electron-longitudinal optical phonon, acoustic and optical deformation potential, intervalley scattering, alloy scattering, and scattering due to rough interfaces. The electron states are evaluated within a self-consistent Schrödinger-Poisson solver. Given such carrier states, we consider the multi quantum well structure as a repetition of this periodicity region. The carrier transport is simulated over the central stage and every time a carrier proceeds an interstage scattering process, the electron is reinjected into the central region and the corresponding electron charge contributes to the current. A comparison of simulation results with measurements for a recently developed InGaAs/GaAsSb QCL has been carried out. The calculated and measured voltage-current characteristics are in acceptable agreement and deviations can be attributed to the non-optimized scattering parameters and to additional scattering mechanisms not yet available. It is possible to observe a dominant impact of polar optical phonon scattering and also significant effects due to alloy scattering. However, more remains to be done for future research. A large number of states are involved in transport, especially for THz QCLs. Subbands are close in energy and strongly coupled by Coulomb scattering, which can play an important role. For more precise simulations, a model for electron-electron scattering has to be added. Furthermore, the parameters of InGaAs based material systems are not well characterized, which requires careful attention.


Voltage-current characteristics at 78K. Comparison between the measured values and the simulation results with and without alloy scattering.


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