4.8 Impact-Ionization

Is it finally possible that the effect cannot be measured because it is compensated by the impact-ionization current? The results shown in Fig. 4.7 could suggest this. One problem is that the device characteristics depend sensitively on impact-ionization. Furthermore, the kink-effect occurs at higher drain voltages, such that a region with negative differential conductance can still remain (Fig. 4.5). Therefore using just impact-ionization in the simulation cannot be treated as a solution to the SOI problem.

M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF