4. Standard Energy Transport Simulations

ANOMALOUS OUTPUT characteristics have been observed in simulations of partially depleted SOI MOSFETs using the standard energy transport model [55, G3]. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is neither present in measurements^4.1 nor in drift-diffusion simulations. In this chapter the problem is investigated under various generation/recombination conditions and an explanation of the cause of this effect is given. On the basis of these investigations a modified energy transport model is developed in Chapter 5.

Subsections

• 4.1 Devices Used
• 4.2 Body and Bipolar Effect
• 4.3 Anomalous Output Characteristic
• 4.4 Body Contact
• 4.5 Cause of the Effect
• 4.6 Transient Behavior
• 4.7 Doping Dependence
• 4.8 Impact-Ionization

M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF