3.4 Carrier Mobility

Electron and hole mobilities, $\mu_n$ and $\mu_p$, are among the most important carrier transport parameters. They are basic inputs for expressing the current in the semiconductor.

Carrier mobilities are influenced by several physical mechanisms, such as scattering by interaction with thermal lattice vibrations, charged or neutral impurities, lattice defects, and surfaces. For alloy materials also alloy scattering mechanism has to be accounted for.

For Si the established mobility model of MINIMOS 6 [43] is used. For a more detailed discussion see [159,160]. The approach is extended for all other semiconductor materials. The mobility models have to support both the DD and the HD transport models. While the low-field mobility is independent of the transport model used, the high-field mobility is modeled in a different way. Thus, the various effects affecting the mobility are grouped into low-field effects, including the impact of lattice scattering, ionized impurities scattering, and surface scattering, and high-field effects, respectively.