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List of Tables

2.1. High-frequency properties of state-of-the-art HBTs
2.2. High-frequency properties of state-of-the-art HFETs
2.3. Shares of HBTs, HEMTs, and MESFETs on the III-V market
2.4. HBT IC applications
2.5. Mole fraction in alloy materials
3.1. Parameter values for Schottky contact model
3.2. Parameter values for the relative permittivity
3.3. Parameter values for the permittivity bowing factor
3.4. Parameter values for mass density
3.5. Parameter values for thermal conductivity
3.6. Parameter values for thermal conductivity bowing factor
3.7. Parameter values for the specific heat
3.8. Parameter values for modeling the bandgap energies
3.9. Bandgap energies at room temperature compared to reported data
3.10. Parameter values for modeling the bandgap energies
3.11. Parameter values for modeling the bandgap energies
3.12. Bandgap energies at room temperature compared to reported data
3.13. Parameter values for the bandgap of alloy materials
3.14. Parameter values for modeling the bandgap energies
3.15. Parameter values for modeling the bandgap narrowing
3.16. Parameter values for modeling the effective carrier masses
3.17. Parameter values for modeling the effective carrier masses
3.18. Bowing parameter values for modeling the effective carrier masses
3.19. Parameter values for energy minima in the DOS model
3.20. Parameter values for modeling the effective carrier masses
3.21. Parameter values for the lattice mobility
3.22. Parameter values for the impurity mobility
3.23. Parameter values for the majority/minority impurity mobility
3.24. Comparison between model parameters for majority electrons in Si at 300 K and the parameter values for the Masetti impurity mobility model
3.25. Parameter values for surface mobility reduction in Si - MINIMOS 6 model
3.26. Parameter values for surface mobility reduction in Si - Lombardi model
3.27. Parameter values for DD high-field mobility model
3.28. Parameter values for DD high-field mobility model
3.29. Parameter values for the two-valley HD mobility model
3.30. Parameter values for mobility model for alloy materials
3.31. Parameter values for velocity saturation model
3.32. Parameter values for velocity saturation model for alloy materials
3.33. Parameter values for the energy relaxation time model for basic materials
3.34. Parameter values for energy relaxation times in alloy materials
3.35. Parameter values for SRH recombination model
3.36. Parameter values for Auger recombination model
3.37. Parameter values for the radiative recombination model
3.38. Parameter values for DD impact ionization model
3.39. Parameter values for surface DD impact ionization model
3.40. Parameter values for HD impact ionization model
3.41. Parameter values for HD impact ionization model

Vassil Palankovski
2001-02-28