H. Kirchauer and S. Selberherr: Three-Dimensional Photolithography Simulation
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3.1 Simulation Model


The exposure state of the photoresist is described by the concentration of the photoactive compound (PAC) , which constitutes the latent bulk image. The bulk image is transferred into the photoresist by light absorption. Thereby the PAC is dissolved and the optical properties, e.g., the refractive index , are changed. As usually this exposure/bleaching reaction is modeled by Dill's `ABC'-model [13]



where is the exposing light intensity. Consequently, the EM field inside the nonlinear photoresist has to be determined. Because the bleaching rate is small as compared to the frequency of the EM field, we apply a quasi-static approximation, i.e.,



where the initial PAC distribution is homogeneous, . Furthermore, we assume a steady-state field distribution within a time step . Therefore, the EM field is time-harmonic and obeys the Maxwell equations in the form of



The complex permittivity is related to the refractive index by Maxwell's law, , and the exposing light intensity is given by [14]



The equation set (2) to (4) represents the simulation model for the exposure/bleaching reaction, whereby an efficient solution of the inhomogeneous but linear Maxwell equations (3) is the crucial point for the applicability of the model. The principal simulation flow of the exposure/bleaching module is illustrated in Fig. 7.




Figure 7: Simulation flow for the exposure/bleaching module.



next up previous
Next: 3.2 Maxwell Equations Up & Previous: 3 Exposure/Bleaching Simulation
H. Kirchauer and S. Selberherr: Three-Dimensional Photolithography Simulation