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3 Device Simulation

 In order to obtain the necessary data a minimum set of device simulations is carried out for a given structure at the nominal operating temperature Tnom (cf. Table 1). The data sets 1-3b yield the main performance parameters, and they are functions of the supply voltage, so they cover also VDD variations. The simulations 3a/3b render the terminal charges for the on-state and the off-state respectively (cf. [3]). The sets 4a/4b determine the noise margins and are valid for a fixed VDD. The sets 5a/5b are independent of VDD and render only informational parameters, so they are optional.


  
Table 1: Device simulations
simulation device data
1   dc step VG and VD Ion(VDD)
2   dc step VD, VG= 0V Ioff(VDD)
3a  transient ramp VG, VD= 0V QG,on(VDD), QD,on(VDD)
3b  transient ramp VD, VG= 0V QG,off(VDD), QD,off(VDD)
4a  dc step VG, VD= VDD/2 ID(VG, VD=VDD/2)
4b  dc step VD, VG= VDD/2 ID(VD, VG=VDD/2)
5a  dc step VG, VD=50mV IDlin(VG)
5b  dc step VD ($\le$1V), VG= VT,lin ID(VD, VG=VT,lin)

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Next: 4 Key Parameters and Up: VLSI Performance Metric Based Previous: 2 System Model

G. Schrom, V. De, and S. Selberherr: VLSI Performance Metric Based on Minimum TCAD Simulations