A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling

Christoph Wasshuber , Hans Kosina , and Siegfried Selberherr
Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040 Vienna, Austria
Phone: +43/1/58801-3851, FAX: +43/1/5059224,
E-mail: wasshuber@iue.tuwien.ac.at, WWW: http://www.iue.tuwien.ac.at

Abstract. - A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. The simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.

Figure 1: The SIMON Logo

• 1 Introduction
• 2 The Simulator
• 3 Simulating Co-tunneling
• 4 Application - Electron Trap
• References