Workshop on High Performance TCAD 2019

Technology computer-aided design (TCAD) simulations are used for designing electronic devices and circuits and for predicting their electrical characteristics. Simulations face a tremendous increase in physical and thus computational complexity which is a consequence of novel device designs using more complex device geometries as well as novel materials, both driven by ever-increasing integration densities. The drastic increase in computational complexity in certain areas requires considerable efforts in high performance computing approaches, an underdeveloped focus area within TCAD. At the same time, it is of crucial importance to address practically relevant problems and embrace the latest challenges to keep up a thorough support of simulations alongside rapidly changing technologies.

The workshop will be held following the IWCN and will be split up into two half-days, i.e., in the afternoon of May 24 and in the morning of May 25.

Confirmed Invited Speakers

  • Asen Asenov, Glasgow University, UK — TCAD Simulations
  • Laura Bellentani, University of Modena and Reggio Emilia, Italy — Simulation of Two-Electron Dynamics in Hall Interferometers
  • Shela Aboud, Synopsys, USA — First-Principles Modeling of Defects in Semiconductors
  • Al-Moatasem Bellah El-Sayed, Nanolayers Research Computing, UK — First-Principles Simulations and Machine Learning
  • Lado Filipovic, TU Wien, Austria — Electromigration in Nano-Interconnects
  • Andreas Hössinger, SILVACO, Inc., USA — Process TCAD Simulations
  • Tillmann Kubis, Purdue University, USA — Quantum Transport Simulations
  • Mark E. Law, University of Florida, USA — Simulating Superconducting Josephson Junctions and Circuits
  • Mathieu Luisier, ETH Zurich, Switzerland — Quantum Transport Simulations
  • Alexander Shluger, University College London, UK — First Principles Simulations

Book of Abstracts

The book of abstracts for WHPTCAD 2019 is available under the following link: WHPTCAD 2019 Book of Abstracts


The Workshop on High Performance TCAD will provide a platform to interlink experts from academia and industry with different backgrounds and application fields. The goal is to exchange perspectives, current challenges, and to encourage interdisciplinary knowledge transfer and collaborations. Therefore, scientists and engineers engaged or interested in the following fields (but not limited to) are addressed to join the workshop:

  • Computational Engineering
  • Computer Graphics
  • Material Science
  • Semiconductor Physics
  • Semiconductor Chemistry
  • Process Design/Engineering/Simulation
  • Device Design/Engineering/Simulation
  • Circuit Design/Engineering/Simulation
  • and other relevant areas

Topics of interest are (but not limited to)

Topics of interest include (but are not limited to) challenging computational tasks and challenging practical simulation settings in process/device/circuit TCAD.  A few exemplary areas of interest (deliberately picked from various areas) are:

  • Gas phase particle transport
  • Surface advection
  • Algorithms and data structures for topography simulations
  • Erosion and dilation operations of distance functions
  • Redistancing/Normalization (Eikonal equation solver)
  • Non-planar epitaxy
  • Diffusion
  • Strain engineering and simulation
  • Ray-tracing for non-visualization applications
  • Quantum electron transport
  • First-principles simulations (DFT, MD)
  • Linear and non-linear solvers
  • Parallel computing approaches (shared-memory, distributed-memory, GPU)
  • Machine learning approaches

Important Dates

  • Submission Deadline: Jan 15, 2019 Jan 25, 2019
  • Notification of Acceptance: Feb 15, 2019 Feb 25, 2019
  • Hotel Reservation Deadline: Apr 18, 2019 May 3, 2019
  • Early Registration Deadline: May 10, 2019
  • Workshop on High Performance TCAD: May 24-25, 2019

Abstract Submission

Participants wishing to give an oral presentation (including the invited speakers) are kindly asked to e-mail a one-page abstract (only text) of your presentation following the template of IWCN to All accepted abstracts will be compiled into a Booklet of Abstracts and hosted on this website.

We will select additional invited speakers from our pool of submitted abstracts.

Organizing Committee

Paul Manstetten, Christian Doppler Laboratory for High Performance TCAD, TU Wien, Austria
Josef Weinbub, Christian Doppler Laboratory for High Performance TCAD, TU Wien, Austria

Local Arrangements Chair
Stephen Goodnick, Arizona State University, USA


This workshop is organized by the Christian Doppler Laboratory for High Performance TCAD located at the Institute for Microelectronics, TU Wien, Austria, and is sponsored by the Christian Doppler Research Association and SILVACO, Inc.