Tomáš Hadámek; Viktor Sverdlov
Temperature modeling and pulse shaping strategies for energy optimization in 2T-SOT-MRAM Journal Article
In: Solid-State Electronics, vol. 232, pp. 109284, 2025, ISSN: 0038-1101.
Abstract | Links | BibTeX | Tags: Hot-electron heating, Pulse-shaping strategies, Reduced energy consumption, Temperature, Two-terminal SOT-MRAM
@article{HADAMEK2026109284,
title = {Temperature modeling and pulse shaping strategies for energy optimization in 2T-SOT-MRAM},
author = {Tomáš Hadámek and Viktor Sverdlov},
url = {https://www.sciencedirect.com/science/article/pii/S0038110125002291},
doi = {https://doi.org/10.1016/j.sse.2025.109284},
issn = {0038-1101},
year = {2025},
date = {2025-11-25},
urldate = {2026-01-01},
journal = {Solid-State Electronics},
volume = {232},
pages = {109284},
abstract = {A fully 3D model coupling spin, charge, magnetization, and temperature dynamics has been employed to study the two-terminal spin–orbit-torque magnetoresistive random-access memory (2T-SOT-MRAM). To account for heating from tunneling electrons, we applied an asymmetric heating model near the tunnel barrier, revealing that symmetric model can underestimate free layer temperature increase by over 25%. We further employ the model to simulate switching of the 2T-SOT-MRAM under different voltage pulse shapes and show that the pulse-shaping strategies can not only reduce power consumption by more than 30%, but also significantly reduce peak temperature of the device during writing.},
keywords = {Hot-electron heating, Pulse-shaping strategies, Reduced energy consumption, Temperature, Two-terminal SOT-MRAM},
pubstate = {published},
tppubtype = {article}
}
A fully 3D model coupling spin, charge, magnetization, and temperature dynamics has been employed to study the two-terminal spin–orbit-torque magnetoresistive random-access memory (2T-SOT-MRAM). To account for heating from tunneling electrons, we applied an asymmetric heating model near the tunnel barrier, revealing that symmetric model can underestimate free layer temperature increase by over 25%. We further employ the model to simulate switching of the 2T-SOT-MRAM under different voltage pulse shapes and show that the pulse-shaping strategies can not only reduce power consumption by more than 30%, but also significantly reduce peak temperature of the device during writing.