5.1.3.1 Effect of the Polysilicon Gate Doping on the Source and Drain Extension Tunneling

Fig. 5.12 shows the effect of the doping concentration in the polysilicon gate on the extension region gate current density. Increasing the polysilicon doping leads to a slight increase of the main tunneling component and to a strong decrease of the minority tunneling component in both nMOS and pMOS devices.

Figure 5.12: Effect of the polysilicon doping on the electron tunneling current (left) and the hole tunneling current (right) in the source and drain extension region of an nMOS (top) and a pMOS (bottom) with 2 nm dielectric thickness and 5e18 cm-3 substrate doping.

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A. Gehring: Simulation of Tunneling in Semiconductor Devices