5.1.3.2 Effect of the Substrate Doping on the Source and Drain Extension Tunneling

Fig. 5.13 shows the effect of the substrate doping concentration on the extension region gate current density. Similar to the polysilicon gate doping, a higher substrate doping leads to increased majority and decreased minority tunneling current.

Figure 5.13: Effect of the substrate doping on the electron tunneling current (left) and the hole tunneling current (right) in the source and drain extension region of an nMOS (top) and a pMOS (bottom) with 2 nm dielectric thickness and 5e20 cm-3 polysilicon doping.

A. Gehring: Simulation of Tunneling in Semiconductor Devices