2.2 Phenomenological Approach

In this section the carrier continuity equations and the drift-diffusion current relations will be derived. Together with POISSON's equation from the previous section this equation-set forms the basic semiconductor equations [8, p.41]. They are based on the drift-diffusion transport model, the simplest reasonable transport model possible.


M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF