4. Standard Energy Transport Simulations

ANOMALOUS OUTPUT characteristics have been observed in simulations of partially depleted SOI MOSFETs using the standard energy transport model [55, G3]. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is neither present in measurements4.1 nor in drift-diffusion simulations. In this chapter the problem is investigated under various generation/recombination conditions and an explanation of the cause of this effect is given. On the basis of these investigations a modified energy transport model is developed in Chapter 5.


M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF