To compare Device 1 to an equivalent MOSFET a second device has been investigated which has a small body contact added to pin the potential of the body to fixed values.
This device has been generated by MINIMOS 6, the device simulator with which the Monte Carlo simulations have been performed. It has a gate-length of . Gate-oxide and silicon-film thickness as well as the doping concentrations have the same values as in Device 1.
For comparison and verification an SOI device has been modeled after the "Well-Tempered" MOSFET  using the doping profiles available, including the super steep retrograde (SSR) channel doping and source/drain halo-doping. To achieve a partially depleted device a substrate doping of has been assumed, and the substrate thickness has been limited to .
M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF