3.6 Conclusion



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3.6 Conclusion

 

A transient two-dimensional numerical model of MOSFETs including selfconsistently the dynamics of interface and bulk traps has been developed. The model has been applied to study the charge-pumping effect in silicon bulk MOSFETs and SOI devices on a rigorous footing.

The charge-pumping effect has been considered in detail by means of analytical methods. The analytical models proposed in the literature have been critically examined. A tight interplay between the analytical and the numerical approaches has provided a better inside in the charge-pumping effect in MOS devices.

In particular, we have studied the following problems:

The transient model of MOS devices including the trap-dynamics can be additionally applied to study several problems:



next up previous contents
Next: 4 Analysis of Interband Up: 3 Analytical and Numerical Previous: 3.5.4 Interface Traps Build-up



Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994