Contents

• Abstract
• Kurzfassung
• Acknowledgements
• List of Symbols
• 1 Introduction
• 2 The Effect of Nondegenerate Gate on MOS Device Characteristics
  • 2.1 Dual Gate CMOS Technology
    • Surface-Channel Versus Buried-Channel Devices
    • 2.1.1 Advanced Gate Design in Submicrometer CMOS Technologies
    • 2.1.2 Redistribution and Activation of Dopants in Implanted Gates
  • 2.2 Analytical Modeling of MOS Structures with Nondegenerate Gate
    • 2.2.1 Fundamental Relations
    • 2.2.2 Model for the Moderately Doped Gate
    • 2.2.3 Basic Characteristics of MOS Structure
  • 2.3 Experimental Results and Additional Physical Effects
    • 2.3.1 Comparison with Experimental Results
    • 2.3.2 Additional Physical Phenomena in Gate
      • Conclusion
  • 2.4 Numerical Modeling and Evaluation of MOSFET Characteristics
    • 2.4.1 Modeling of MOSFETs with Nondegenerate Gate
    • 2.4.2 Impact of the Gate Depletion on MOSFET Characteristics
    • 2.4.3 Analytical Estimation of MOSFET Characteristics
• 3 Analytical and Numerical Investigation of the Charge Pumping
  • 3.1 Introduction
    • 3.1.1 Charge-Pumping Techniques
    • 3.1.2 Other Techniques to Study Traps in Small MOSFETs
    • 3.1.3 Restrictions of Analytical Approaches
  • 3.2 Physical Model and Numerical Approach
    • 3.2.1 Physical Model
    • 3.2.2 Discretization of the Basic Equations and Numerical Aspect
    • 3.2.3 Solution of the Trap-Dynamics Equation
    • 3.2.4 Approach to Simulate the Charge-Pumping Experiments
  • 3.3 Analytical Modeling of the Large-Signal Charge-Pumping Effect
    • 3.3.1 Rigorous Analysis of the Complete Characteristics Charge-Pumping Current versus Gate Top Level
      • Processes at the Top Level:
      • Charge-Pumping Threshold and Flat-Band Voltage
      • Processes at the Falling Edge:
      • Processes at the Rising Edge:
      • Processes at the Bottom Level:
      • Charge-Pumping Current
      • Analytical Model Versus Numerical Results
      • Frequency-Dependence of the Threshold and the Flat-Band Voltage
    • 3.3.2 Emission in the Non-Steady-State Mode
  • 3.4 Geometric Current Component and Other Non-Ideal Effects
    • 3.4.1 Minority Carriers Remaining in the Channel
    • 3.4.2 Carriers Emitted from the Interface States
  • 3.5 Hot-Carrier Degradation Analysis
    • 3.5.1 Charge-Pumping Characteristics of MOSFETs after Hot-Carrier Stress: A Numerical Study
    • 3.5.2 Extraction of the Spatial Distribution of Interface Traps in MOSFETs
      • Symmetrical Case:
      • Non-symmetrical Case:
      • Other Large-Signal Charge-Pumping Techniques
      • Constant Amplitude Technique
    • 3.5.3 Charge-Pumping Characteristics of LDD MOSFETs before Stress
    • 3.5.4 Interface Traps Build-up in -Channel LDD MOSFETs
  • 3.6 Conclusion
• 4 Analysis of Interband Tunneling in MOS Devices
  • 4.1 Interband Tunneling in ULSI MOS Devices
  • 4.2 Numerical Analysis of Interband Tunneling in MOSFETs
    • Two-Dimensional Numerical Approach
    • The Potential and Field Distributions in the Critical Area
• 5 Summary
  • Contributions

• Appendix A: Derivations, Expressions and Approximations in Gate Modeling
  • Carrier Concentrations:
  • Solution of the Poisson Equation for Fermi-Dirac Statistics:
  • Solution of the Poisson Equation for Maxwell-Boltzmann Statistics:
  • Semiconductor Capacitance in Cases of FD and MB Statistics:
  • Onset of Inversion for FD Statistics:
  • Approximations to the Fermi Integrals and their Inverse:
  • Model of the Band-gap Narrowing:
• Appendix B: Discretization Error in the Trap Equation: An Analysis
• Appendix C: Selfconsistent Coupling of the Trap Equations with the Basic Semiconductor Equations
• Appendix D: Charge-Pumping Signals in MOSFETs
• Appendix E: Analytical Modeling of the Gate-Corner/LDD-Region Electrical-Field Fringing Effect
• Appendix F: Theoretical Consideration of the Potential Perturbation Induced by Localized Surface Charge
  • F.1 Local Potential Perturbation
  • F.2 Gate-Bias Shift
• Appendix G: Relations for the Lateral Profiling of Interface States and Fixed Oxide Charge by the Charge Pumping
  • G.1 Interface Trap Spatial Distribution
  • G.2 Filtering and Differentiation of Numerical Results
  • G.3 Fixed Oxide Charge Spatial Distribution
• Appendix H: Direct Tunneling Rate in Spatially Variable Fields

• References
• Own Publications
• Curriculum Vitae
• About this document ...