If at the Si/SiO interface there is a dopant concentration and on the oxide and silicon side, respectively, as illustrated in Fig. 4.1, the segregation coefficient can be written as [83]

(4.23) |

If it is assumed that the flux of dopants from the SiO segment to the silicon segment through the interface is [83]

where and are the reaction rate coefficients in SiO and silicon, respectively. is the interface transfer coefficien which has units of velocity.

In the steady state the interface flux and (4.24) can be transformed to the relationship

(4.25) |

Ch. Hollauer: Modeling of Thermal Oxidation and Stress Effects