next up previous contents index
Next: Eigene Publikationen Up: Dissertation Christian Köpf Previous: A Materialparameter


A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dutton, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Iizuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, and A. Yoshii.
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon.
IEEE Trans. Electron Devices, 41(9):1646-1654, 1994.

S. Adachi.
Material Parameters of In1-xGaxAsyP1-y and Related Binaries.
J. Appl. Phys., 53(12):8775-8792, 1982.

S. Adachi.
GaAs, AlAs, and AlxGa1-xAs: Material Parameters for Use in Research and Device Applications.
J. Appl. Phys., 58:R1-R29, 1985.

S. Adachi.
Band Gaps and Refractive Indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key Properties for a Variety of the 2-4-$\mu$m Optoelectronic Device Applications.
J. Appl. Phys., 61(10):4869-4876, 1987.

S. Adachi.
Physical Properties of III-V Semiconductor Compounds.
Wiley, 1992.

S. Adachi.
Heterojunctions of InGaAs and Band Offsets.
In Bhattacharya [18], section 3.4, pages 84-96.

S. Adachi, editor.
Properties of Aluminium Gallium Arsenide.
Number 7 in EMIS Datareviews Series. IEE INSPEC, 1993.

F. Ali and A. Gupta.
HEMTs & HBTs: Devices, Fabrication and Circuits.
Artech House, 1991.

N.R. Aluru, K.H. Law, P.M. Pinsky, and R.W. Dutton.
An Analysis of the Hydrodynamic Semiconductor Device Model - Boundary Conditions and Simulations.
COMPEL, 14(2/3):157-185, 1995.

D.A. Anderson, N. Apsley, P. Davies, and P.L. Giles.
Compensation in Heavily Doped n-Type InP and GaAs.
J. Appl. Phys., 58(8):3059-3067, 1985.

V.K. Arora.
High-Field Distribution and Mobility in Semiconductors.
Jpn.J.Appl.Phys., 24(5):537-545, 1985.

V.K. Arora, D.S.L. Mui, and H. Morkoc.
Mobility Degradation and Transferred Electron Effect in Gallium Arsenide and Indium Gallium Arsenide.
IEEE Trans. Electron Devices, 34(6):1231-1237, 1987.

V.K. Arora and A. Naeem.
Phonon-Scattering-Limited Mobility in a Quantum-Well Heterostructure.
Phys. Rev. B, 31(6):3887-3892, 1985.

D.E. Aspnes.
GaAs Lower Conduction-Band Minima: Ordering and Properties.
Phys. Rev. B, 14:5331-5343, 1976.

Australian and New Zealand Institutes of Physics.
21. Condensed Matter Physics Meeting, Pakatoa Island, New Zealand, 1997.

I.C. Bassignana, C.J. Miner, and N. Puetz.
Photoluminescence and Double-Crystal X-Ray Study of InGaAs/InP: Effect of Mismatch Strain on Band Gap.
J. Appl. Phys., 65(11):4299-4305, 1989.

O. Berolo, J.C. Woolley, and J.A. Van Vechten.
Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys.
Phys. Rev. B, 8(8):3794-3798, 1973.

P. Bhattacharya, editor.
Properties of Lattice-Matched and Strained Indium Gallium Arsenide.
Number 8 in EMIS Datareviews Series. IEE INSPEC, 1993.

P. Bhattacharya.
Material and Device Fundamentals of InP-Based Microelectronics and Optoelectronics.
Compound Semiconductor, 2(2):35-39, 1996.

D. Bimberg and B. Srocka.
Photoluminescence of Pure InGaAs Alloys.
In Bhattacharya [18], section 6.1, pages 159-168.

G.L. Bir and G.E. Pikus.
Symmetry and Strain-Induced Effects in Semiconductors.
Wiley, 1974.

J.S. Blakemore.
Semiconducting and Other Major Properties of Gallium Arsenide.
J. Appl. Phys., 53:R123-R181, 1982.

J.S. Blakemore.
Semiconductor Statistics.
Dover, New York, 1987.
reprint of original Pergamon Press edition, 1962.

N. Bouarissa and H. Aourag.
Theoretical Investigation of the Pressure Dependences of Energy Gaps in InAs and InSb.
Mat. Sci. Eng. B, 33(2-3):122-132, 1995.

H. Brand.
Thermoelektrizität und Hydrodynamik.
Dissertation, Technische Universität Wien, 1994.

K. Brennan and K. Hess.
High Field Transport in GaAs, InP and InAs.
Solid-St. Electron., 27(4):347-357, 1984.

H. Brooks.
Scattering by Ionized Impurities in Semiconductors.
Phys. Rev., 83:879, 1951.

J.C. Cao and X.L. Lei.
Carrier Transport Simulation for Bulk AlxGal-xAs with a $\Gamma-L-X$ Band Structure Based on Lei-Ting Balance Equations.
Solid-St. Electron., 39(7):971-975, 1996.

M. Cardona and N.E. Christensen.
Acoustic Deformation Potentials and Heterostructure Band Offsets in Semiconductors.
Phys. Rev. B, 35(12):6182-6194, 1987.

H.C. Casey and M.B. Panish.
Heterostructure Lasers, volume Part B: Materials and Operating Characteristics.
Academic Press, 1978.

P.C. Chao, A.J. Tessmer, K.-H.G. Duh, P. Ho, M.-Y. Kao, P.M. Smith, J.M. Balingall, S.-M.J. Liu, and A.A. Jabra.
W-Band Low-Noise InAlAs/InGaAs Lattice-Matched HEMT's.
IEEE Electron Device Lett., 11(1):59-62, 1990.

D. Chattopadhyay and H.J. Queisser.
Electron Scattering by Ionized Impurities in Semiconductors.
Rev.Mod.Phys., 53(4):745-768, 1981.

C.Y. Chen, A.Y. Cho, K.Y. Cheng, T.P. Pearsall, P. O'Connor, and P.A. Garbinski.
Depletion Mode Modulation Doped Al0.48In0.52As-Ga0.47In0.53As Heterojunction Field Effect Transistors.
IEEE Electron Device Lett., EDL-3(6):152-155, 1982.

Y. Chen, X.W. Lin, Z. Liliental-Weber, J. Washburn, J.F. Klem, and J.Y. Tsao.
Dislocation Formation Mechanism in Strained InxGa1-xAs Islands Grown on GaAs(001) Substrates.
Appl. Phys. Lett., 68(1):111-113, 1996.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann.
Metamorphic InAlAs/InGaAs HEMT's on GaAs Substrates with a Novel Composite Channels Design.
IEEE Electron Device Lett., 17(6):273-275, 1996.

V.W.L. Chin.
Calculation of Carrier Concentrations and Fermi Energies in Intrinsic and Donor-Doped In1-xGaxAs.
Solid-St. Electron., 34(11):1187-1190, 1991.

V.W.L. Chin and T.L. Tansley.
Alloy Scattering and Lattice Strain Effects on the Electron Mobility in In1-xGaxAs.
Solid-St. Electron., 34(10):1055-1063, 1991.

A.Y. Cho, M.B. Panish, and I. Hayashi.
Molecular Beam Epitaxy of GaAs, AlxGa1-xAs and GaP.
In K. Paulus, editor, Proc. Third Int. Symp. on Gallium Arsenide and Related Compounds, pages 18-29, Aachen, Germany, 1970. Institute of Physics, London.

M.L. Cohen and T.K. Bergstresser.
Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures.
Phys. Rev., 141(2):789-796, 1966.

C.M. Colomb, S.A. Stockman, S. Varadarajan, and G.E. Stillman.
Minority Carrier Transport in Carbon Doped Gallium Arsenide.
Appl. Phys. Lett., 60(1):65-67, 1992.

E. Conwell and V.F. Weisskopf.
Theory of Impurity Scattering in Semiconductors.
Phys. Rev., 77(3):388-390, 1950.

E.M. Conwell.
High Field Transport in Semiconductors, volume 9 of Solid State Physics.
Academic Press, New York, London, 1967.

B. Czermak.
Monte-Carlo Simulation des stationären Elektronentransportes in polaren Halbleitern.
Diplomarbeit, Technische Universität Wien, 1993.

DAMOCLES: Monte Carlo Simulation of Semiconductor Devices. , September 1996.

J. De-Sheng, Y. Makita, K. Ploog, and H.J. Queisser.
Electrical Properties and Photoluminescence of Te-Doped GaAs Grown By Molecular Beam Epitaxy.
J. Appl. Phys., 53(2):999-1006, 1982.

P.P. Debye and E.M. Conwell.
Electrical Properties of N-Type Germanium.
Phys. Rev., 93(4):693-706, 1954.

R. Dingle, H.L. Störmer, A.C. Gossard, and W. Wiegmann.
Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices.
Appl. Phys. Lett., 33(7):665-667, 1978.

L. Dobaczewski, A.R. Peaker, and J.M. Langer.
DX Defect Centres in AlGaAs.
In Adachi [7], section 9.3, pages 278-288.

P.E. Dodd, M.L. Lovejoy, M.S. Lundstrom, M.R. Melloch, J.M. Woodall, and D. Pettit.
Demonstration of npn InAs Bipolar Transistors with Inverted Base Doping.
IEEE Electron Device Lett., 17(4):166-168, 1996.

B.W. Dodson and J.Y. Tsao.
Relaxation of Strained-Layer Semiconductor Structures via Plastic Flow.
Appl. Phys. Lett., 51(17):1325-1327, 1987.

B.W. Dodson and J.Y. Tsao.
Erratum: Relaxation of Strained-Layer Semiconductor Structures via Plastic Flow [Appl. Phys. Lett. 51, 1325 (1987)].
Appl. Phys. Lett., 52(10):852, 1988.

J.R. Downes, D.J. Dunstan, and D.A. Faux.
Numerical Calculation of Equilibrium Critical Thickness in Strained-Layer Epitaxy.
Semicond. Sci. Technol., 9:1265-1267, 1994.

D.J. Dunstan, P. Kidd, L.K. Howard, and R.H. Dixon.
Plastic Relaxation of InGaAs Grown on GaAs.
Appl. Phys. Lett., 59(26):3390-3392, 1991.

M. Dyakonov and M. Shur.
Detection, Mixing, and Frequency Multiplication of Terahertz Radiation by Two-Dimensional Electronic Fluid.
IEEE Trans. Electron Devices, 43(3):380-387, 1996.

L.F. Eastman.
Low-Field Electron and Hole Mobilities in Lattice-Matched InGaAs on InP.
In Bhattacharya [18], section 4.1, pages 103-106.

M. Ershov and V. Ryzhii.
Procedure for Fitting Monte Carlo Calculated Impact Ionization Coefficients to Experiment.
J. Appl. Phys., 76(3):1672-1675, 1994.

W. Fawcett, A.D. Boardman, and S. Swain.
Monte Carlo Determination of Electron Transport Properties in Gallium Arsenide.
J.Phys.Chem.Solids, 31:1963-1990, 1970.

E. Fermi.
Un metodo statistico per la determinazione di alcune priorieta dell'atome.
Rend. Accad. Naz. Lincei, 6:602-607, 1927.

D.K. Ferry.
Macmillan, New York, 1991.

M.V. Fischetti.
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures-Part I: Homogeneous Transport.
IEEE Trans. Electron Devices, 38(3):634-649, 1991.

M.V. Fischetti and S.E. Laux.
Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects.
Phys. Rev. B, 38(14):9721-9745, 1988.

M.V. Fischetti and S.E. Laux.
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures-Part II: Submicrometer MOSFET's.
IEEE Trans. Electron Devices, 38(3):650-660, 1991.

E.A. Fitzgerald.
Lattice Mismatch and Dislocations in InGaAs/GaAs Strained Heterostructures.
In Bhattacharya [18], section 1.2, pages 6-15.

R. Frühwirth and M. Regler.
B.I. Wissenschaftsverlag, Mannheim, 1983.

T. Furuta and M. Tomizawa.
Velocity Electric Field Relationship for Minority Electrons in Highly Doped p-GaAs.
Appl. Phys. Lett., 56(9):824-826, 1990.

M. Geddo, V. Bellani, and G. Guizzetti.
Optical Study of the Strain Effect in Pseudomorphic In1-xGaxAs-InP Heterostructures.
Phys. Rev. B, 50(8):5456-5461, 1994.

G. Giesecke.
Lattice Constants, volume 2 of Semiconductors and Semimetals, chapter 4.
Academic Press, 1966.

S. Giugni and T.L. Tansley.
Comment on the Compositional Dependence of Bandgap in AlGaAs and Band-Edge Discontinuities in AlGaAs-GaAs Heterostructures.
Semicond.Sci.Technol., 7:1113-1116, 1992.

A. Glodeanu.
A Theory of Some Disordered Solids I.
Revue Roumaine de Physique, 26(8/9):945-965, 1981.

P. Godts, E. Constant, J. Zimmermann, and D. Depreeuw.
Investigation of the Influence of DX Centers on HEMT Operation at Room Temperature.
In Nougier and Gasquet [162], pages 705-708.

P. Gombas.
Die statistische Theorie des Atomes und ihre Anwendungen.
Springer, Wien, 1949.

T. González Sánchez, J.E. Velázques Pérez, P.M. Gutiérrez Conde, and D. Pardo Collantes.
Five-Valley Model for the Study of Electron Transport Properties at Very High Electric Fields in GaAs.
Semicond.Sci.Technol., 6:862-871, 1991.

N. Grandjean, J. Massies, and F. Raymond.
Critical Thickness for Islanded Growth of Highly Strained InxGa1-xAs on GaAs(001).
Jpn. J. Appl. Phys., 33(10A):L1427-L1430, 1994.

K. Hagimoto, T. Kataoka, M. Yoneyama, and I. Kobayashi.
Impact on InP-based ICs on Future Lightwave Communications Systems.
In IPRM'97 [93], pages 233-236.

J. Han, D.K. Ferry, and P. Newman.
Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT's.
IEEE Electron Device Lett., 11(5):209-211, 1990.

W. Hänsch.
The Drift Diffusion Equation and its Application in MOSFET Modeling.
Springer, Wien, New York, 1991.

W. Hänsch, M. Orlowski, and W. Weber.
The Hot-Electron Problem in Submicron MOSFET.
In Nougier and Gasquet [162], pages 597-606.

W.A. Harrison.
Elementary Theory of Heterojunctions.
J. Vac. Sci. Technol., 14(4):1016-1021, 1977.

W.A. Harrison.
Solid State Theory.
Dover, New York, 1980.
reprint of original McGraw-Hill edition, 1970.

W.A. Harrison.
Theory of Band Line-Ups.
J. Vac. Sci. Technol. B, 3(4):1231-1238, 1985.

H. Haupt.
InP-Based Components for Telecom Systems in Europe.
In IPRM'97 [93], pages 3-6.

I. Hayashi.
Heterostructure Lasers.
IEEE Trans. Electron Devices, ED-31(11):1630-1642, 1984.

I. Hayashi, M.B. Panish, P.W. Foy, and S. Sumski.
Junction Lasers Which Operate Continuously at Room Temperature.
Appl. Phys. Lett., 17(3):109-111, 1970.

F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, M. Grundmann, and D. Bimberg.
Room Temperature Operation of Al-free InAs/GaAs Quantum Dot Laser Grown by Metal Organic Chemical Vapor Deposition.
In IPRM'97 [93], page PD1.

C. Hermann and C. Weisbuch.
$\vec{k} \cdot \vec{p}$ Perturbation Theory in III-V Compounds and Alloys: A Reexamination.
Phys. Rev. B, 15(2):823-833, 1977.

K. Hess.
Impurity and Phonon Scattering in Layered Structures.
Appl. Phys. Lett., 35(7):484-486, 1979.

K. Hess.
Advanced Theory of Semiconductor Devices.
Prentice-Hall, 1988.

K. Hess, editor.
Monte Carlo Device Simulation: Full Band and Beyond.
Kluwer, Boston, Dordrecht, London, 1991.

J.M. Hinckley and J. Singh.
Influence of Substrate Composition and Crystallographic Orientation on the Band Structure of Pseudomorphic Si-Ge Alloy Films.
Phys. Rev. B, 42(6):3546-3566, 1990.

J.M. Hinckley and J. Singh.
Dependence of Pseudomorphic Semiconductor Band Gap on Substrate Orientation.
J. Appl. Phys., 69(4):2694-2696, 1991.

A. Hintz.
Simulation und Modellierung des nicht-stationären Elektronentransports in III-V Verbindungshalbleitern.
PhD thesis, Technische Universitat Hamburg-Harburg, 1990.

K. Hirakawa, Y. Hashimoto, K. Harada, and T. Ikoma.
Strain Effect on Band Offsets at Pseudomorphic InAs/GaAs Heterointerfaces Characterized by X-ray Photoemission Spectroscopy.
Phys. Rev. B, 44(4):1734-1740, 1991.

1997 Int. Conf. on Indium Phosphide and Related Materials, Hyannis, Massachusetts, USA, 1997. IEEE.

H. Ito and T. Ishibashi.
Minority-Electron Mobility in p-Type GaAs.
J. Appl. Phys., 65(12):5197-5199, 1989.

C. Jacoboni and P. Lugli.
The Monte Carlo Method for Semiconductor Device Simulation.
Springer, Wien-New York, 1989.

C. Jacoboni and L. Reggiani.
The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials.
Rev.Mod.Phys., 55(3):645-705, 1983.

M. Jaffe and J. Singh.
Band Structure and Charge Control Studies of n- and p-type Pseudomorphic Modulation-Doped Field-Effect Transistors.
J. Appl. Phys., 65(1):329-338, 1989.

S.C. Jain, J.M. McGregor, and D.J. Roulston.
Band-Gap Narrowing in Novel III-V Semiconductors.
J. Appl. Phys., 68(7):3747-3749, 1990.

S.C. Jain, J.M. McGregor, D.J. Roulston, and P. Balk.
Modified Simple Expression for Band Gap Narrowing in n-Type GaAs.
Solid-St. Electron., 35(5):639-642, 1992.

S.C. Jain and D.J. Roulston.
A Simple Expression for Band Gap Narrowing (BGN) in Heavily Doped Si, Ge, GaAs and GexSi1-x Strained Layers.
Solid-St. Electron., 34(5):453-465, 1991.

J.R. Jones, G.B. Tait, S.H. Jones, and D.S. Katzer.
DC and Large-Signal Time-Dependent Electron Transport in Heterostructure Devices: An Investigation of the Heterostructure Barrier Varactor.
IEEE Trans. Electron Devices, 42(8):1393-1403, 1995.

J.R. Jones, G.B. Tait, S.H. Jones, and D.S. Katzer.
Correction to ``DC and Large-Signal Time-Dependent Electron Transport in Heterostructure Devices: An Investigation of the Heterostructure Barrier Varactor''.
IEEE Trans. Electron Devices, 44(2):350, 1997.

G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr.
Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors.
In Proc. 21. Condensed Matter Physics Meeting [15], page TA02.

G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr.
Monte Carlo Simulation of Electron Transport in Doped Silicon.
In High Performance Computing on the Information Superhighway - HPC Asia '97, pages 444-449, Seoul, Korea, 1997. IEEE Computer Society Press.

E.O. Kane.
Thomas Fermi Approach to Impure Semiconductor Band Structure.
Phys. Rev., 131(1):79-88, 1963.

T. Kaneto, K.W. Kim, and M.A. Littlejohn.
Calculation of Minority-Carrier Mobilities in Heavily Doped p-Type Semiconductors in the Dielectric-Function Formalism.
Phys. Rev. B, 47(24):16257-16266, 1993.

A. Ketterson, M. Moloney, W.T. Masselink, C.K. Peng, J. Klem, R. Fischer, W. Kopp, and H. Morkoç.
High Transconductance InGaAs/AlGaAs Pseudomorphic Modulation-Doped Field-Effect Transistors.
IEEE Electron Device Lett., EDL-6(12):628-630, 1985.

D.M. Kim, S. Lee, M.I. Nathan, A. Gopinath, F. Williamson, and K. Beyzavi.
Minority Electron Mobility and Lifetime in the p+GaAs Base of AlGaAs/GaAs Heterojunction Bipolar Transistors.
Appl. Phys. Lett., 62(8):861-863, 1993.

Ch. Köpf, H. Kosina, and S. Selberherr.
Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation.
In Woo and Park [221], pages 1255-1260.
Proc. 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea.

Ch. Köpf, H. Kosina, and S. Selberherr.
Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys.
In Proc. 21. Condensed Matter Physics Meeting [15], page TP21.

Ch. Köpf, H. Kosina, and S. Selberherr.
Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System.
In Shur and Suris [188], pages 675-678.
Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia.

Ch. Köpf, H. Kosina, and S. Selberherr.
Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport.
Solid-St. Electron., 41(8):1139-1152, 1997.

H. Kosina.
Simulation des Ladungstransportes in elektronischen Bauelementen mit Hilfe der Monte-Carlo-Methode.
Dissertation, Technische Universität Wien, 1992.

H. Kosina, M. Harrer, P. Vogl, and S. Selberherr.
A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands.
In H. Ryssel and P. Pichler, editors, Simulation of Semiconductor Devices and Processes, volume 6, pages 396-399, Wien, 1995. Springer.

H. Kosina and S. Selberherr.
A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration.
In Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD IV, pages 117-122, Seattle, 1992.

S.P. Kowalczyk, W.J. Schaffer, E.A. Kraut, and R.W. Grant.
Determination of the InAs-GaAs (100) Heterojunction Band Discontinuities by X-Ray Photoelectron Spectroscopy (XPS).
J. Vac. Sci. Technol., 20(3):705-708, 1982.

M.P.C.M. Krijn.
Heterojunction Band Offsets and Effective Masses in III-V Quaternary Alloys.
Semicond. Sci. Technol., 6:27-31, 1991.

V. Krishnamoorthy, Y.W. Lin, L. Calhoun, H.L. Liu, and R.M. Park.
Residual Strain Analysis of InxGa1-xAs/GaAs Heteroepitaxial Layers.
Appl. Phys. Lett., 61(22):2680-2682, 1992.

H. Kroemer.
Heterostructure Bipolar Transistors and Integrated Circuits.
Proc. IEEE, 70(1):13-25, 1982.

H. Kroemer and W.R. Frensley.
Prediction of Semiconductor Heterojunction Discontinuities from Bulk Band Structure.
J.Vac.Sci.Technol., 13(4):810-815, 1976.

T.F. Kuech, B.S. Meyerson, and E. Veuhoff.
Disilane: A New Silicon Doping Source in Metalorganic Chemical Vapor Deposition of GaAs.
Appl. Phys. Lett., 44(10):986-988, 1984.

K.J. Kuhn and R.B. Darling.
Mobility of Strained and Dislocated InxGa1-xAs Semiconductor Material.
IEEE Trans. Electron Devices, 39(6):1288-1294, 1992.

J. Kui and W.A. Jesser.
Thermal Relaxation in Strained InGaAs/GaAs Heterostructures.
J. Electron. Mater., 20(10):827-831, 1991.

T. Kunikiyo, Y. Kamakura, M. Yamaji, H. Mizuno, M. Takenaka, K. Tanaguchi, and C. Hamaguchi.
Adjustable Parameter Free Monte Carlo Simulation for Electron Transport in Silicon Including Full Band Structure.
In Int. Workshop on VLSI Process and Device Modeling (1993 VPAD), pages 40-41, Nara, Japan, 1993.

C.P. Kuo, S.K. Vong, R.M. Cohen, and G.B. Stringfellow.
Effect of Mismatch Strain on Band Gap in III-V Semiconductors.
J. Appl. Phys., 57(12):5428-5432, 1985.

S. Kuwano, N. Takachio, K. Iwashita, T. Otsuji, Y. Imai, T. Enoki, K. Yoshino, and K. Wakita.
160 Gbit/s (4 ch $\times$ 40 Gbit/s Electrically Multiplexed Data) WDM Transmission Over 320 km Dispersion-Shifted Fiber.
In Proc. Opt. Fiber Commun., 1995.
paper PDP 25.

D. Lancefield, A.R. Adams, and M.A. Fisher.
Reassessment of Ionized Impurity Scattering and Compensation in GaAs and InP Including Correlation Scattering.
J. Appl. Phys., 62(6):2342-2359, 1987.

M. Landolt and J. Börnstein.
Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, volume 17/A of Neue Serie, Gruppe III.
Springer, Berlin, 1982.

M. Landolt and J. Börnstein.
Numerical Data and Functional Relationships in Science and Techology, volume 22/A of New Series, Group III.
Springer, Berlin, 1987.

K. Lee, M.S. Shur, T.J. Drummond, and H. Morkoc.
Low Field Mobility of 2-D Electron Gas in Modulation Doped AlxGa1-xAs/GaAs Layers.
J. Appl. Phys., 54(11):6432-6438, 1983.

Ph. Lindorfer.
Numerische Simulation von Galliumarsenid MESFETs.
Dissertation, Technische Universität Wien, 1991.

M.A. Littlejohn, J.R. Hauser, T.H. Glisson, D.K. Ferry, and J.W. Harrison.
Alloy Scattering and High Field Transport in Ternary and Quaternary III-V Semiconductors.
Solid-St. Electron., 21:107-114, 1978.

M.A. Littlejohn, K.W. Kim, and H. Tian.
High-Field Transport in InGaAs and Related Heterostructures.
In Bhattacharya [18], section 4.2, pages 107-116.

A. Lorke, M. Fricke, B.T. Miller, M. Haslinger, J.P. Kotthaus, G. Medeiros-Ribeiro, and P.M. Petroff.
Far-Infrared and Capacitance Spectroscopy of Self-Assembled InAs Quantum Dots.
In Shur and Suris [188], pages 803-808.
Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia.

M.A. Lourenço, K.P. Homewood, and L. Considine.
Relaxation of Strained InGaAs/GaAs Layers under Thermal Processing.
Mat. Sci. Eng. B, 28(1-3):507-509, 1994.

J.R. Lowney and H.S. Bennett.
Majority and Minority Electron and Hole Mobilities in Heavily Doped GaAs.
J. Appl. Phys., 69(10):7102-7110, 1991.

P. Lugli.
Monte Carlo Simulation of Charge Transport in Semiconductor Devices.
In H.E. Maes, R.P. Mertens, and R.J. Van Overstraeten, editors, 22nd European Solid State Device Research Conference - ESSDERC'92, volume 19 of Microelectr.Eng., pages 275-282, Leuven, Belgium, 1992. Elsevier.

G.D. Mahan.
Energy Gap in Si and Ge: Impurity Dependence.
J. Appl. Phys., 51(5):2634-2646, 1980.

P. Maigné and J.-M. Baribeau.
Measurements of Residual Strain in InGaAs Buffer Layers.
J. Appl. Phys., 76(3):1962-1964, 1994.

G. Margaritondo and P. Perfetti.
The Problem of Heterojunction Band Discontinuities.
In F. Capasso and G. Margaritondo, editors, Heterojunction Band Discontinuities, chapter 2, pages 59-114. Elsevier, 1987.

G. Masetti, M. Severi, and S. Solmi.
Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon.
IEEE Trans. Electron Devices, ED-30(7):764-769, 1983.

Y. Matsuoka, S. Yamahata, K. Kurishima, and H. Ito.
Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation.
Jpn. J. Appl. Phys., 35(11):5646-5654, 1996.

J.W. Matthews and A.E. Blakeslee.
Defects in Epitaxial Multilayers I. Misfit Dislocations.
J. Cryst. Growth, 27(1):118-125, 1974.

M.V. Maximov, I.V. Kochnev, Y.M. Shernyakov, S.V. Zaitsev, N.Y. Gordeev, A.F. Tsatsul'nikov, A.V. Sakharov, I.L. Krestnikov, P.S. Kop'ev, Z.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner, and U. Gösele.
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385 K) Grown by Metal Organic Chemical Vapour Deposition.
In Shur and Suris [188], pages 809-812.
Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia.

A. Messiah.
Quantenmechanik 2.
DeGruyter, 1990.

T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu.
A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions.
Jpn. J. Appl. Phys., 19(5):L225-L227, 1980.

M. Missous.
Conduction and Valence Band Offsets at the GaAs/AlGaAs Heterostructure Interface.
In Adachi [7], section 4.4, pages 73-76.

T.E. Mitchell and O. Unal.
Dislocation Arrangements in GaAs/Ga1-xInxAs Multilayers Grown on (001), (111) and (112) Substrates.
J. Electron. Mater., 20(10):723-734, 1991.

N. Moll.
HFETs: A Study in Developmental Device Physics.
In S. Tiwari, editor, Compound Semiconductor Transistors: Physics and Technology, pages 3-20. IEEE Press, 1993.

H. Morkoc, H. Unlu, and G. Ji.
Principles and Technology of MODFETS, volume 1.
Wiley, 1991.

N.F. Mott.
Metal-Insulator Transition.
Rev.Mod.Phys., 40(4):677-683, 1968.

N.F. Mott.
Conduction in Non-Crystalline Materials.
Clarendon Press, Oxford, 1987.

N.F. Mott and H.S.W. Massey.
The Theory of Atomic Collisions.
Clarendon Press, Oxford, 1949.

J.-E. Müller, T. Grave, H.J. Siweris, M. Kärner, A. Schäfer, H. Tischer, H. Riechert, L. Schleicher, L. Verweyen, A. Bangert, W. Kellner, and T. Meier.
A GaAs HEMT MMIC Chip Set for Automotive Radar Systems Fabricated by Optical Stepper Lithography.
IEEE J. Solid-State Circuits, 32(9):1342-1349, 1997.

E. Murakami, K. Nakagawa, H. Etoh, A. Nishida, and M. Miyao.
Ultra High Hole Mobility in Strain-Controlled Si-Ge Modulation-Doped FET.
In Proc. Int. Electron Devices Meeting, pages 375-378, 1990.

B.R. Nag.
Electron Transport in Compound Semiconductors, volume 11 of Springer Series in Solid-State Sciences.
Springer, 1980.

R.E. Nahory, M.A. Pollack, W.D. Johnston, and R.L. Barns.
Band Gap versus Composition and Demonstration of Vegard's Law for In1-xGaxAsyP1-y Lattice Matched to InP.
Appl. Phys. Lett., 33(7):659-661, 1978.

C. Nguyen, T. Liu, M. Chen, and R. Virk.
Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistors.
In IPRM'97 [93], pages 15-19.

L.D. Nguyen, A.S. Brown, M.A. Thompson, and L.M. Jelloian.
50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors.
IEEE Trans. Electron Devices, 39(9):2007-2014, 1992.

R.J. Nicholas, J.C. Portal, C. Houlbert, P. Perrier, and T.P. Pearsall.
An Experimental Determination of the Effective Masses for GaxIn1-xAsyP1-y Alloys Grown on InP.
Appl. Phys. Lett., 34(8):492-494, 1979.

D.D. Nolte, W. Walukiewicz, and E.E. Haller.
Band-Edge Hydrostatic Deformation Potentials in III-V Semiconductors.
Phys. Rev. Lett., 59(4):501-504, 1987.

J.-P. Nougier and D. Gasquet, editors.
Proc. 18th European Solid State Device Research Conference - ESSDERC 88, volume 49 of Journal de Physique, Les Ulis Cedex, France, 1988. les éditions de physique.

C. Ohler, R. Kohleick, A. Förster, and H. Lüth.
Strain Dependence of the Valence-Band Offset in InAs/GaAs Heterojunctions Determined by Ultraviolet Photoelectron Spectroscopy.
Phys. Rev. B, 50(11):7833-7837, 1994.

M. Oloumi and C.C. Matthai.
Electronic Structure and Band Discontinuities in the InAs/GaAs System.
J. Phys.: Condensed Matter, 2:5153-5160, 1990.

G. Ottaviani, L. Reggiani, C. Canali, F. Nava, and A. Alberigi-Quaranta.
Hole Drift Velocity in Silicon.
Phys. Rev. B, 12(8):3318-3329, 1975.

J.D. Parsons and F.G. Krajenbrink.
Tin Doping of MOVPE Grown Gallium Arsenide Using Tetraethyltin.
J. Cryst. Growth, 68(1):60-64, 1984.

S. Paul, J.B. Roy, and P.K. Basu.
Empirical Expressions for the Alloy Composition and Temperature Dependence of the Band Gap and Intrinsic Carrier Density in GaxIn1-xAs.
J. Appl. Phys., 69(2):827-829, 1991.

T.P. Pearsall, R. Hendel, P. O'Connor, K. Alavi, and A.Y. Cho.
Selectively-Doped Al0.48In0.52As/Ga0.47In0.53As Heterostructure Field Effect Transistor.
IEEE Electron Device Lett., EDL-4(1):5-8, 1983.

R. People and J.C. Bean.
Calculation of Critical Layer Thickness Versus Lattice Mismatch for GexSi1-x/Si Strained-Layer Heterostructures.
Appl. Phys. Lett., 47(3):322-324, 1985.

R. People and J.C. Bean.
Erratum: Calculation of Critical Layer Thickness Versus Lattice Mismatch for GexSi1-x/Si Strained-Layer Heterostructures.
Appl. Phys. Lett., 49(4):229, 1986.

F.H. Pollak.
Effects of Homogeneous Strain on the Electronic and Vibrational Levels in Semiconductors.
In T.P. Pearsall, editor, Strained-Layer Superlattices: Physics, volume 32 of Semiconductors and Semimetals, chapter 2, pages 17-53. Academic Press, 1990.

F.H. Pollak.
Energy Gaps of AlGaAs.
In Adachi [7], section 4.1, pages 53-57.

B.K. Ridley.
Reconciliation of the Conwell-Weisskopf and Brooks-Herring Formulae for Charged-Impurity Scattering in Semiconductors: Third-Body Interference.
J.Phys.C, 10:1589-1593, 1977.

B.K. Ridley.
Quantum Processes in Semiconductors.
Oxford University Press, third edition, 1993.

D.L. Rode and S. Knight.
Electron Transport in GaAs.
Phys. Rev. B, 3(8):2534-2540, 1971.

J.J. Rosenberg, M. Benlamri, P.D. Kirchner, J.M. Woodall, and G.D. Pettit.
An In0.15Ga0.85As/GaAs Pseudomorphic Single Quantum Well HEMT.
IEEE Electron Device Lett., EDL-6(10):491-493, 1985.

K. Sadra and B.G. Streetman.
The Coupled Hole-Phonon System and Minority-Electron Transport in p-GaAs.
Solid-St. Electron., 35(8):1139-1149, 1992.

H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue.
Interface Roughness Scattering in GaAs/AlAs Quantum Wells.
Appl. Phys. Lett., 51(23):1934-1936, 1987.

E. Sano, M. Yoneyama, S. Yamahata, and Y. Matsuoka.
InP/InGaAs Double-Heterojunction Bipolar Transistors for High-Speed Optical Receivers.
IEEE Trans. Electron Devices, 43(11):1826-1832, 1996.

D. Schroeder.
Modelling of Interface Carrier Transport for Device Simulation.
Springer, 1994.

E.F. Schubert.
Doping in III-V Semiconductors.
Cambridge University Press, 1993.

K. Seeger.
Semiconductor Physics.
Springer, Berlin, Heidelberg, New York, London, Paris, Tokyo, 1989.

S. Selberherr.
Analysis and Simulation of Semiconductor Devices.
Springer, Wien, 1984.

H. Shen, S.H. Pan, Z. Hang, J. Leng, F.H. Pollak, J.M. Woodall, and R.N. Sacks.
Photoreflectance of GaAs and Ga0.82Al0.18As at Elevated Temperatures up to 600 $^{\circ}$C.
Appl. Phys. Lett., 53(12):1080-1082, 1988.

H. Shichijo and K. Hess.
Band Structure Dependent Transport and Impact Ionization in GaAs.
Phys. Rev. B, 23(8):4197-4207, 1981.

H. Shichijo, K. Hess, and G.E. Stillman.
Simulation of High-Field Transport in GaAs Using a Monte Carlo Method and Pseudopotential Band Structures.
Appl. Phys. Lett., 38:89-91, 1981.

H. Shigematsu, T. Iwai, Y. Matsumiya, H. Ohnishi, O. Ueda, and T. Fujii.
Ultrahigh fT and fmax New Self-Alignment InP/InGaAs HBT's with a Highly Be-doped Base Layer Grown by ALE/MOCVD.
IEEE Electron Device Lett., 16(2):55-57, 1995.

M.S. Shur and R.A. Suris, editors.
Compound Semiconductors 1996, number 155 in Institute of Physics Conference Series, 1997.
Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia.

R.M. Sieg and S.A. Ringel.
Reabsorption, Band-Gap Narrowing, and the Reconciliation of Photoluminescence Spectra with Electrical Measurements for Epitaxial n-InP.
J. Appl. Phys., 80(1):448-458, 1996.

J. Singh.
Electron and Hole Effective Masses in Lattice-Matched and Strained InGaAs.
In Bhattacharya [18], section 3.5, pages 97-100.

J. Singh.
Energy Gaps and Band Structure of Lattice-Matched and Strained InGaAs.
In Bhattacharya [18], section 3.1, pages 61-69.

J.-I. Song, B.W.-P. Hong, C.J. Palmstrøm, and K.B. Chough.
InP Based Carbon-Doped Base HBT Technology: Its Recent Advances and Circuit Applications.
In Proc. 6th Int. Conf. on Indium Phosphide and Related Materials (IPRM), pages 523-526, Santa Barbara, CA, 1994. IEEE Press.

J.-I. Song, W.-P. Hong, C.J. Palmstrøm, B.P. Van der Gaag, and K.B. Chough.
Millimetre-Wave InP/InGaAs Heterojunction Bipolar Transistors with a Subpicosecond Extrinsic Delay Time.
Electron. Lett., 30(5):456-457, 1994.

K. Souissi, F. Odeh, H.H.K. Tang, and A. Gnudi.
Comparative Studies of Hydrodynamic and Energy Transport Models.
COMPEL, 13(2):439-453, 1994.

D.M. Szmyd, P. Porro, A. Majerfeld, and S. Lagomarsino.
Heavily Doped GaAs:Se. I. Photoluminescence Determination of the Electron Effective Mass.
J. Appl. Phys., 68(5):2367-2375, 1990.

A. Taguchi and T. Ohno.
Interface Electronic Structures in an InAs/GaAs Lattice-Mismatched System.
Phys. Rev. B, 39(11):7803-7810, 1989.

J. Tersoff.
Theory of Semiconductor Heterojunctions: The Role of Quantum Dipoles.
Phys. Rev. B, 30(8):4874-4877, 1984.

J.L. Thobel, L. Baudry, A. Cappy, P. Bourel, and R. Fauquembergue.
Electron Transport Properties of Strained InxGa1-xAs.
Appl. Phys. Lett., 56(4):346-348, 1990.

R. Thoma, H.J. Peifer, W.L. Engl, W. Quade, R. Brunetti, and C. Jacoboni.
An Improved Impact-Ionization Model for High-Energy Electron Transport in Si with Monte Carlo Simulation.
J. Appl. Phys., 69(4):2300-2311, 1991.

L.H. Thomas.
The Calculation of Atomic Fields.
Proc. Camb. Philos. Soc., 23:542-548, 1927.

Texas Instruments announces Record-Low-Power TSRAM Cell based on integration of resonant-tunneling diode (RTD) and HFET on InP. , December 1996.

S. Tiwari and S.L. Wright.
Material Properties of p-Type GaAs at Large Dopings.
Appl. Phys. Lett., 56(6):563-565, 1990.

L.R. Tomasetta.
One Million Transistor Circuits in GaAs.
In Woo and Park [221], pages 29-32.
Proc. 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea.

M. Tomizawa, T. Furuta, K. Yokoyama, and A. Yoshii.
Low-Field Mobility Enhancement in AlGaAs/GaAs/AlGaAs Double-Heterojunction Structures.
In Proc. Int. Electron Devices Meeting, pages 500-503, 1988.

 C.G. Van de Walle.
Band Lineups and Deformation Potentials in the Model-Solid Theory.
Phys. Rev. B, 39(3):1871-1883, 1989.

C.G. Van de Walle and R.M. Martin.
Theoretical Calculations of Heterojunction Discontinuities in the Si/Ge System.
Phys. Rev. B, 34(8):5621-5634, 1986.

C.G. Van de Walle and R.M. Martin.
Theoretical Study of Band Offsets at Semiconductor Interfaces.
Phys. Rev. B, 35(15):8154-8165, 1987.

J.H. van der Merwe.
Strain Relaxation in Epitaxial Overlayers.
J. Electron. Mater., 20(10):793-803, 1991.

Y.P. Varshni.
Temperature Dependence of the Energy Gap in Semiconductors.
Physica, 34:149-154, 1967.

L. Vegard.
Die Konstitution der Mischkristalle und die Raumfüllung der Atome.
Z. Phys., 5:17-26, 1921.

J. Vilms and J.P. Garrett.
The Growth and Properties of LPE GaAs.
Solid-St. Electron., 15(4):443-455, 1972.

O. Wada.
Advances in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing.
In IPRM'97 [93], pages 7-10.

W. Walukiewicz, J. Lagowski, L. Jastrzebski, P. Rava, M. Lichtensteiger, C.H. Gatos, and H.C. Gatos.
Electron Mobility and Free-Carrier Absorption in InP; Determination of the Compensation Ratio.
J. Appl. Phys., 51(5):2659-2668, 1980.

W. Walukiewicz, L. Lagowski, L. Jastrzebski, M. Lichtensteiger, and H.C. Gatos.
Electron Mobility and Free-Carrier Absorption in GaAs: Determination of the Compensation Ratio.
J. Appl. Phys., 50(2):899-908, 1979.

L. Wang.
Monte-Carlo-Simulation des Elektronentransports in technologisch signifikanten Halbleitern.
Diplomarbeit, Technische Universität Wien, 1995.

P.D. Wang, S.N. Holmes, T. Le, R.A. Stradling, I.T. Ferguson, and A.G. de Oliveira.
Electrical and Magneto-Optical Studies of MBE InAs on GaAs.
Semicond.Sci.Technol., 7:767-786, 1992.

V.A. Wilkinson and A.R. Adams.
The Effect of Temperature and Pressure on InGaAs Band Structure.
In Bhattacharya [18], section 3.2, pages 70-75.

T.H. Windhorn, L.W. Cook, and G.E. Stillman.
The Electron Velocity-Field Characteristics for n-In0.53Ga0.47As at 300K.
IEEE Electron Device Lett., EDL-3(1):18-20, 1982.

T.H. Windhorn, T.J. Roth, L.M. Zinkiewicz, O.L. Gaddy, and G.E. Stillman.
High Field Temperature Dependent Electron Drift Velocities in GaAs.
Appl. Phys. Lett., 40:513-515, 1982.

M. Wojtowicz, R. Lai, D.C. Streit, G.I. Ng, T.R. Block, K.L. Tan, P.H. Liu, A.K. Freudenthal, and R.M. Dia.
0.10 $\mu$m graded InGaAs Channel InP HEMT with 305 GHz fT and 340 GHz fmax.
IEEE Electron Device Lett., 15(11):477-479, 1994.

J.-C. Woo and Y.S. Park, editors.
Compound Semiconductors 1995, number 145 in Institute of Physics Conference Series, 1996.
Proc. 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea.

C.-S. Wu, Y.-J. Chan, C.-H. Chen, J.-L. Shieh, and J.-I. Chyi.
In0.52(AlxGa1-x)0.48As/In0.53Ga0.47As ($0\leq x \leq 1$) Heterostructure and its Application on HEMTs.
In Woo and Park [221], pages 817-822.
Proc. 22nd Int. Symp. Compound Semiconductors, Cheju Island, Korea.

J. Xu and M. Shur.
Velocity-Field Dependence in GaAs.
IEEE Trans. Electron Devices, ED-34(8):1831-1832, 1987.

S. Yamahata, K. Kurishima, H. Ito, and Y. Matsuoka.
Over-220-GHz-fT-and-fmax InP/InGaAs Double-Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter.
In Proc. 17th GaAs IC Symp., pages 163-166, San Diego, CA, 1995. IEEE Press.

M. Yanagihara, H. Sakai, Y. Ota, M. Tanabe, K. Inoue, and A. Tamura.
253-GHz fmax AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-Contact and L-Shaped Electrode.
In Proc. Int. Electron Devices Meeting, pages 807-810, 1995.

E.T. Yu, J.O. McCaldin, and T.C. McGill.
Band Offsets in Semiconductor Heterojunctions.
In H. Ehrenreich and D. Turnbull, editors, Solid State Physics, volume 46, pages 1-146. Academic Press, 1992.

P.Y. Yu and M. Cardona.
Fundamentals of Semiconductors - Physics and Materials Properties.
Springer, Berlin, 1996.

J.K. Zahurak, A.A. Iliadis, S.A. Rishton, and W.T. Masselink.
Transistor Performance and Electron Transport Properties of High Performance InAs Quantum-Well FET's.
IEEE Electron Device Lett., 15(12):489-492, 1994.

K. Zhang, X. Zhang, P. Bhattacharya, and J. Singh.
Influence of Pseudomorphic Base-Emitter Spacer Layers on Current-Induced Degradation of Beryllium-Doped InGaAs/InAlAs Heterojunction Bipolar Transistors.
IEEE Trans. Electron Devices, 43(1):8-14, 1996.

J. Zou, B.F. Usher, D.J.H. Cockayne, and R. Glaisher.
Critical Thickness Determination of InxGa1-xAs/GaAs Strained-Layer System by Transmission Electron Microscopy.
J. Electron. Mater., 20(10):855-859, 1991.

next up previous contents index
Next: Eigene Publikationen Up: Dissertation Christian Köpf Previous: A Materialparameter

Christian Koepf