| 1T/1MTJ | | One-Transistor/One-MTJ |
| AP | | Antiparallel |
| BL | | Bit Line |
| CC-IMP | | Current-Controlled IMP |
| CMOS | | Complementary Metal-Oxide-Semiconductor |
| CRI | | Combined Reprogrammable-Implication |
| DW | | Domain Wall |
| DWM | | DW Motion |
| FA | | Full Adder |
| HA | | Half Adder |
| HRS | | High-Resistance State |
| IMP | | Implication |
| ITRS | | International Technology Roadmap for Semiconductors |
| LLG | | Landau-Lifshitz-Gilbert |
| LRS | | Low-Resistance State |
| MgO | | Magnesium Oxide |
| MR | | Magnetoresistance |
| MRAM | | Magnetoresistive RAM |
| MTF | | Magnetic Thin-Film |
| MTJ | | Magnetic Tunnel Junction |
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| NIMP | | Negated IMP |
| P | | Parallel |
| P-IMP | | Parallel IMP |
| RAM | | Random-Access Memory |
| RG | | Reliable Gap |
| S-IMP | | Serial IMP |
| SD | | State Drift |
| SDE | | SD Error |
| SL | | Source Line |
| STT | | Spin-Transfer Torque |
| SW | | Switching Window |
| TMR | | Tunnel Magnetoresistance |
TiO | | Titanium Dioxide |
| VC-IMP | | Voltage-Controlled IMP |
| WL | | Word Line |
| XOR | | Exclusive OR |
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