| 1T0C | one-transistor-zero-capacitor |
| 1T1C | one-transistor-one-capacitor |
| 1T1R | one-transistor-one-resistor |
| CBRAM | conductive bridge RAM |
| CMOS | complementary metal-oxide-semiconductor |
| DMTJ | dual MTJ with two barriers |
| DRAM | dynamic random access memory |
| FET | field-effect transistor |
| GAAFET | gate-all-around FET |
| GMR | giant magnetoresistance |
| HRS | high resistance state |
| LL | Landau-Lifshitz |
| LLG | Landau-Lifshitz-Gilbert |
| LLGS | Landau-Lifshitz-Gilbert-Slonczewski |
| LRS | low resistance state |
| MIM | metal-insulator-metal |
| MOSFET | metal-oxide-semiconductor FET |
| MRAM | magnetoresistive RAM |
| MTJ | magnetic tunnel junction |
| MuGFET | multiple gate FET |
| PCRAM | phase change RAM |
| Pr-MTJ | cell utilizing precessional switching mechanism |
| RAM | random access memory |
| RRAM | resistive/redox RAM |
| SAF | synthetic antiferromagnet |
| SMTJ | single MTJ with one tunnel barrier |
| SONOS | semiconductor-oxide-nitride-oxide-semiconductor |
| SRAM | static RAM |
| STT-MRAM | spin transfer torque MRAM |
| TAS-MTJ | cell utilizing thermally assisted switching mechanism |
| TAT | trap-assisted tunneling |
| TMO | transition metal oxide |
| TMR | tunnel magnetoresistance |
| TT-MTJ | three-terminal MTJ cell |
| UT-DMTJ | ultra-thin dual MTJ |