D I S S E R T A T I O N

Modeling of Emerging
Resistive Switching Based
Memory Cells

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
von

Alexander Makarov

Leithastraße 16/6
A-1200 Wien, Österreich

geboren am 4. April 1985 in Wolgograd, UdSSR

Wien, im März 2014 

Kurzfassung
Abstract
Аннотация
Acknowledgement
Contents
List of Abbreviations
List of Symbols
1 Introduction
 1.1 Charge-based Memory Technology
 1.2 Outline of the Thesis
2 Resistive Change Based Memory
 2.1 RRAM Basics
 2.2 Mechanisms and Models of Resistive Switching
 2.3 Conclusions
3 Stochastic Model of the Resistive Switching
 3.1 Switching Mechanism
 3.2 Model Systems Description
 3.3 Electron Hopping and Ion Motion
 3.4 Applications of Stochastic Based Method
4 Magnetoresistive Memory
 4.1 MRAM and STT-MRAM Basics
 4.2 In-Plane and Perpendicular Free Layer Magnetization
 4.3 Magnetic Cell Architecture
 4.4 Conclusions
5 Macro- and Micromagnetic Approach
 5.1 Landau-Lifshitz-Gilbert Equation
 5.2 Landau-Lifshitz-Gilbert-Slonczewski Equation
 5.3 Effective Magnetic Field
6 Numerical Implementation of Micromagnetic Approach
 6.1 Space Discretization
 6.2 Magnetic Field Discretization
 6.3 Time Discretization
 6.4 Energy Calculation
7 STT-MRAM Cells Structure Optimization
 7.1 Influence of the Reference Layers
 7.2 Composite Free Layer
 7.3 Structure Optimization of the Composite Free Layer
8 Magnetization Oscillations in MTJ-based Structures
 8.1 Switching Failure in a MTJ-based STT-MRAM
 8.2 MTJ-based Bias-Field-Free Spin-Torque Oscillator
9 Summary
Bibliography
List of Publications
Curriculum Vitae