PROMIS-NT provides a default set of quantities available for diffusion simulations which is coordinated with other process simulators within the VISTA TCAD environment. It is supported to define any number of additional quantities including their charge states in different materials and their representation within PIF files (Section 4.5.3.2). Table 4.1 depicts an excerpt of the quantities contained in the PROMIS-NT default quantity set. The complete and up-to-date list can be examined by looking into the PROMIS-NT default setup file promis-defaults.mdl which is part or the PROMIS-NT distribution.
| quantity | MDL name | description | |
| Boron | B | substitutional boron | |
| Boron | B_active | interstitial boron | |
| Boron | B_gb | grain boundary boron (poly silicon) | |
| Arsenic | As | substitutional arsenic | |
| Arsenic | As_active | interstitial arsenic | |
| Phosphorus | P | substitutional phosphorus | |
| Phosphorus | P_active | interstitial phosphorus | |
| Silicon | Si | silicon | |
| Silicon | Si_interstitial | interstitial silicon | |
| Silicon | Si_clustered | clustered silicon | |
| Silicon | Si_vacancy | silicon atom vacancy | |
| Grain Size | Grain_Size | poly silicon grain size | |
| Grain Orientation | Grain_Orientation | poly silicon grain orientation | |
| Stress | Sxx | stress tensor element xx | |
| Stress | Sxy | stress tensor element xy | |
| Stress | Syy | stress tensor element yy | |
| Velocity | vx | velocity lateral component | |
| Velocity | vy | velocity vertical component |
It is recommended to leave these default definitions unchanged if input or output files of PROMIS-NT should be exchanged with other simulators of the VISTA framework.