For the computation of the built-in potential (4.5) it is required that the charge states of quantities in the surrounding material segments are defined. Again PROMIS-NT provides a set of predefined materials (Table 4.2) for which the charge states of the default quantities Table 4.1 are properly defined.
| material | MDL name |
| silicon | Si |
| germanium | Ge |
| silicon-germanium | SiGe |
| gallium arsenide | GaAs |
| silicon dioxide | SiO2 |
| Nitride | Si3N4 |
| resist | Resist |
| aluminum oxide | Al2O3 |
| poly crystalline silicon | Poly |
The explicit computation of the built-in potential in other materials can be ensured by adding charge state definitions for the required quantities as described in Section 4.5.3.3.